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Etchless Fabrication of High-Quality Refractory Titanium Nitride Nanostructures
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-03-11 , DOI: 10.1002/pssb.202000573 Stavros Panos 1 , Despina Tselekidou 1 , Spyros Kassavetis 1 , Ilias Fekas 1 , John Arvanitidis 1 , Dimitris Christofilos 2 , Dimitrios Karfaridis 1 , Spilios Dellis 1 , Stergios Logothetidis 1 , Panos Patsalas 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-03-11 , DOI: 10.1002/pssb.202000573 Stavros Panos 1 , Despina Tselekidou 1 , Spyros Kassavetis 1 , Ilias Fekas 1 , John Arvanitidis 1 , Dimitris Christofilos 2 , Dimitrios Karfaridis 1 , Spilios Dellis 1 , Stergios Logothetidis 1 , Panos Patsalas 1
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Nanosphere lithography has emerged as an efficient route to produce plasmonic nanostructures. Herein, the processes of nanosphere lithography and reactive magnetron sputtering that seem incompatible for a variety of reasons are reviewed and explained. However, understanding the physical obstacles of this combination enables us to identify a window of process parameters that make the deposition of well-defined trigonal nanoislands of titanium nitride (TiN) feasible. TiN is used as a case study because it is a very good representative of refractory conductive nitrides, such as ZrN, HfN, NbN, and TaN. A UV ozone step is used to confine the triple-junction vias of the polystyrene mask, and the reactive magnetron sputtering parameters are fine-tuned to increase the directionality of deposited species, in particular the substrate-to-target distance is maximized to improve geometrical directionality, and a negative bias voltage is used to guide the ionic species deep into the vias. The proposed process produces well-defined TiN nanoislands with low concentration of point defects that have similar structure with continuous films of high electrical conductivity and plasmonic performance.
中文翻译：
高品质耐火氮化钛纳米结构的无蚀刻制造
纳米球光刻已成为生产等离子体纳米结构的有效途径。在此，回顾和解释了由于各种原因似乎不相容的纳米球光刻和反应磁控溅射工艺。然而，了解这种组合的物理障碍使我们能够确定一个工艺参数窗口，使氮化钛 (TiN) 的明确定义的三角形纳米岛的沉积变得可行。TiN 被用作案例研究，因为它是耐火导电氮化物的很好代表，例如 ZrN、HfN、NbN 和 TaN。紫外臭氧步骤用于限制聚苯乙烯掩模的三结通孔，并微调反应磁控溅射参数以增加沉积物质的方向性，特别是基板到目标的距离被最大化以改善几何方向性，并且使用负偏置电压将离子物质引导到通孔深处。所提出的工艺产生具有低浓度点缺陷的明确定义的 TiN 纳米岛，这些纳米岛具有相似的结构，具有高导电性和等离子体性能的连续薄膜。
更新日期：2021-03-11
中文翻译：
高品质耐火氮化钛纳米结构的无蚀刻制造
纳米球光刻已成为生产等离子体纳米结构的有效途径。在此，回顾和解释了由于各种原因似乎不相容的纳米球光刻和反应磁控溅射工艺。然而，了解这种组合的物理障碍使我们能够确定一个工艺参数窗口，使氮化钛 (TiN) 的明确定义的三角形纳米岛的沉积变得可行。TiN 被用作案例研究，因为它是耐火导电氮化物的很好代表，例如 ZrN、HfN、NbN 和 TaN。紫外臭氧步骤用于限制聚苯乙烯掩模的三结通孔，并微调反应磁控溅射参数以增加沉积物质的方向性，特别是基板到目标的距离被最大化以改善几何方向性，并且使用负偏置电压将离子物质引导到通孔深处。所提出的工艺产生具有低浓度点缺陷的明确定义的 TiN 纳米岛，这些纳米岛具有相似的结构，具有高导电性和等离子体性能的连续薄膜。
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