Characteristics of Multi-Quantum-Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate,Physica Status Solidi (A) - Applications and Materials Science

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Characteristics of Multi-Quantum-Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-10 , DOI: 10.1002/pssa.202000767
Xu Han ₁ , Koki Tsushima ₁ , Takuto Shirai ₁ , Takahiro Ishizaki ₁ , Kazuhiko Shimomura ₁

Affiliation

The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to a SiO₂/Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven-quantum-well-structured LD are grown by low-pressure metal–organic vapor-phase epitaxy. After the pulsed power supply of a high-mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO₂/Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface-electrode-structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO₂/Si substrate is compared with that of an LD grown on an InP/Si substrate.

中文翻译：

表面电极结构直接键合在SiO2 / Si衬底上的InP模板上的多量子阱激光二极管的特性

研究了用亲水键合方法在键合到SiO ₂ / Si衬底上的InP模板上生长的独立约束异质结构多量子阱（SCH-MQW）激光二极管的激光特性。SCH的七量子井结构的LD层是通过低压金属有机气相外延生长的。在用表面电极结构测试高台面波导的脉冲电源后，发现与在InP / Si基板上生长的LD相比，在InP / SiO ₂ / Si基板上生长的LD具有更好的激光发射特性，阈值电流密度等于在InP衬底上生长的表面电极结构的LD的阈值电流密度。在InP / SiO ₂上生长的LD的斜率效率将/ Si基板与在InP / Si基板上生长的LD的基板进行比较。

更新日期：2021-05-19

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