Bond wire degradation is one of the most common failure modes for wire-welded packaging insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond wire detection method based on IGBT turn- on gate voltage overshoot. The degree of bond wires lift-off will change the stray inductance of the gate charge loop circuit, and therefore has a strong influence on turn- on gate voltage overshoot before miller platform, which can be used as an effective bond wire fault indicator. A double pulse test platform is built to verify the resolution and sensitivity of the proposed precursor for bond wire degradation. The dependences on bus voltages, load currents, junction temperatures are discussed and tested. The experimental results show that the gate turn- on voltage overshoot of IGBT increases with the increasing severity of bond wire faults, which agrees with the theoretical analysis. The proposed turn- on gate voltage overshoot-based method has a high sensitivity for identifying bond wire fault at the incipient stage. It offers an effective technique for detecting bond wire degradation for practical applications.

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基于导通门电压过冲的IGBT模块键合线故障检测新方法

对于引线焊接封装的绝缘栅双极晶体管（IGBT）模块，键合线退化是最常见的故障模式之一。本文提出了一种基于IGBT匝数的新型键合线检测方法 在栅极电压过冲。键合线剥离的程度会改变栅极电荷环路的杂散电感，因此对导通电阻有很大影响 在米勒平台之前的栅极电压过冲，可以用作有效的键合线故障指示器。构建了双脉冲测试平台，以验证所提议的前体对键合线降解的分辨率和灵敏度。讨论并测试了对总线电压，负载电流，结温的依赖性。实验结果表明，闸门转向 在IGBT的电压过冲随着键合线故障的严重程度的增加而增加，这与理论分析是一致的。建议的转折 在基于栅极电压过冲的方法在初期识别键合线故障时具有很高的灵敏度。它为实际应用提供了一种检测键合线退化的有效技术。