Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFET s and should be monitored carefully to avoid unexpected power converter failures. Various precursors have been introduced in the literature for gate-oxide degradation monitoring. However, those proposed precursors are temperature dependent and it is highly challenging to eliminate temperature effects. In this article, two new temperature-independent precursors (Miller capacitance and gate–source capacitance changes) are proposed for gate-oxide degradation monitoring of SiC MOSFET s. During the accelerated aging tests under high electric field and high temperature, a consistent change in Miller capacitance and gate–source capacitance is reported for both common source and Kelvin source SiC MOSFET s. Also, the temperature sensitivity of each precursor is investigated. The proposed precursors enable the monitoring of gate-oxide degradation without decoupling the impact of package degradation. Based on the findings, a simple early warning in situ circuit is proposed to monitor gate-oxide aging. A comprehensive precursor comparison is provided to show the merits of the proposed precursors. Finally, the experimental results are presented to validate the efficacy of the in situ monitoring circuit.

中文翻译：

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基于结电容的与温度无关的SiC MOSFET栅极氧化物退化监测

栅极氧化物降解一直是SiC的主要可靠性挑战之一 场效应管 并应进行仔细监控，以免电源转换器发生意外故障。在文献中已经引入了各种前驱物用于栅氧化物降解监测。然而，那些提出的前体是温度依赖性的，消除温度影响是非常具有挑战性的。在本文中，提出了两种新的与温度无关的前驱物（密勒电容和栅源电容变化），用于监测SiC的栅极氧化物降解场效应管 s。在高电场和高温下的加速老化测试中，据报道，普通源和开尔文源SiC的Miller电容和栅极-源极电容均发生了一致的变化场效应管 s。而且，研究了每种前体的温度敏感性。所提出的前体能够在不使封装退化的影响脱钩的情况下，对栅极氧化物的退化进行监测。根据调查结果，进行简单的预警原位提出了用于监视栅极氧化物老化的电路。提供了全面的前体比较，以显示建议的前体的优点。最后，提出了实验结果以验证该药的功效。原位 监控电路。