The generation and transmission of millimeter-wave signals for 5G applications require the use of broadband and high output power photodetectors to bridge from the optical and electronic domains. Therefore, the deep knowledge on the equivalent circuit characteristics of these devices is vital. This study reviews and analyzes de-embedding techniques contributing to the characterization of the physical aspects within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to their active area allowing the extraction of their series resistance and junction capacitance toward the synthesis of an equivalent circuit with lumped elements. The open-short technique is examined and a systematic error introduced by this process underlines the vulnerability of the method on removing parasitics with higher complexity. This error is quantified leading to the implementation of a corrected equation converging with the characteristic features of an $S$-parameter-based de-embedding. These characteristics are also analyzed through simulation approaches showing minimal equivalent inaccuracies on eliminating more complex symmetrical parasitics. A thorough comparison between these three methods is conducted through the calculation of lumped components corresponding to the active region of diodes with different sizes.

中文翻译：

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应用于单行载子光电二极管的去嵌入技术研究

用于 5G 应用的毫米波信号的生成和传输需要使用宽带和高输出功率光电探测器来桥接光学和电子领域。因此，深入了解这些器件的等效电路特性至关重要。本研究回顾并分析了有助于表征单行载子光电二极管有源区域内物理方面的去嵌入技术。去嵌入方法在分析上消除了连接到其有源区域的电传输线的寄生效应，从而允许提取它们的串联电阻和结电容，以合成具有集总元件的等效电路。检查了开短路技术，该过程引入的系统错误强调了该方法在去除具有更高复杂性的寄生参数方面的脆弱性。这个误差被量化，导致一个修正方程的实现与一个特征的特征收敛。$新元-基于参数的去嵌入。还通过模拟方法分析了这些特性，显示在消除更复杂的对称寄生效应时等效误差最小。通过计算不同尺寸二极管的有源区对应的集总分量，对这三种方法进行了彻底的比较。