Abstract

This paper presents a low noise amplifier (LNA) for the ultra-wideband (UWB) application in the range 3.1–10.6 GHz based on active inductor topology. The LNA is designed to provide a flat gain and to reject wireless local area networking interference at 5–6 GHz band. An active inductor based on the feedback resistor topology is proposed in this work and integrated with the LNA. The use of an active inductor instead of a conventional CMOS spiral inductor provides advantages over the area, quality factor, and inductance. The active inductor provides a relatively uniform inductance at 5–6 GHz and is used to design an on-chip notch filter circuit, which achieves a maximum attenuation of 45 dB at the center frequency of ~5.6 GHz. The LNA is designed and processed in the standard 0.18 μm CMOS technology. The simulated LNA exhibits the gain of 20 dB and a noise figure of less than 3.7 dB in the non-interfering bands. The input (S₁₁) and output return losses (S₂₂) are less than –10 and –12 dB, respectively, in the allocated UWB frequency spectrum, and amplifier occupies a chip area of 0.54 μm². The proposed LNA has a superior flat gain, excellent interference rejection, minimum return losses, and a low noise figure in the intended operation band. This LNA finds important application in the radiofrequency front-end devices for UWB application.

中文翻译：

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基于有源电感的超宽带低噪声放大器，可抑制无线局域网的干扰

摘要

本文介绍了一种基于有源电感器拓扑结构，适用于3.1–10.6 GHz范围内的超宽带（UWB）应用的低噪声放大器（LNA）。LNA旨在提供平坦的增益，并抑制5-6 GHz频段的无线局域网络干扰。在这项工作中提出了一种基于反馈电阻器拓扑的有源电感器，并与LNA集成在一起。使用有源电感器代替传统的CMOS螺旋电感器可提供面积，品质因数和电感方面的优势。有源电感器在5-6 GHz处提供相对均匀的电感，并用于设计片上陷波滤波器电路，该电路在中心频率约为5.6 GHz时可实现最大45 dB的衰减。LNA采用标准的0.18μmCMOS技术进行设计和处理。模拟的LNA在非干扰频带中表现出20 dB的增益和小于3.7 dB的噪声系数。输入（小号₁₁）和输出回波损耗（小号₂₂）小于-10和-12分贝，分别在所分配的UWB频谱，和放大器占据的0.54微米的芯片面积²。拟议的LNA在目标工作频段内具有出色的平坦增益，出色的抗干扰性，最小的回波损耗和低噪声系数。该LNA在UWB应用的射频前端设备中发现了重要的应用。