Two-dimensional (2D) layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection. However, most 2D materials are very sensitive to the environment. Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials. Here, we focus on a molybdenum disulfide (MoS₂) phototransistor gated by ferroelectrics, and insert a hexagonal boron nitride (h-BN) layer between MoS₂ and the ferroelectric film to improve the interface. To clarify the role of h-BN in this device, two parallel devices are prepared on the same MoS₂ flake. One device is covered with h-BN, while the other is in direct contact with the ferroelectric film. The electronic and optoelectronic properties of these two devices are then measured and compared. Experimental results reveal that, compared to device without h-BN, the MoS₂ phototransistor with h-BN exhibits higher carrier mobility (average value: 85 cm²·V⁻¹·s⁻¹ and highest value: 185 cm²·V⁻¹·s⁻¹), larger responsivity (85 A·W⁻¹), and larger detectivity (1.76 × 10¹³ Jones). Thus, this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials.

二维（2D）层状材料由于其独特的晶体结构以及在光电检测中出色的光学和电学特性而受到了广泛的关注。但是，大多数2D材料对环境非常敏感。在制备过程中引入的吸附剂和捕集剂会对基于这些材料的设备的性能产生负面影响。在这里，我们将重点放在由铁电体选通的二硫化钼（MoS ₂）光电晶体管上，并在MoS ₂和铁电体膜之间插入六方氮化硼（h-BN）层以改善界面。为了阐明h-BN在此设备中的作用，在同一MoS ₂上准备了两个并行设备薄片。一个装置被h-BN覆盖，而另一个则与铁电膜直接接触。然后测量和比较这两个设备的电子和光电性能。实验结果表明，相比于无的h-BN时，MOS器件₂光电晶体管用的h-BN显示更高的载流子迁移（平均值：85厘米² ·V ^-1 ·秒^-1和最高值：185厘米² ·V ^{- 1} ·s ^-1），较大的响应度（85 A·W ^-1）和较大的检测度（1.76×10 ¹³ Jones）。因此，该策略对于基于2D材料的设备的接口工程和性能改进具有重要意义。