Static Random Access Memory (SRAM) is primarily used as a memory storage element, which is susceptible to radiation-induced Single Event Upsets (SEUs). Hence, a robust SRAM bit-cell design is primarily a difficult task to address the space radiation environment. Furthermore, as the transistor’s size moves into nanometer regimes, a new challenge like Single Event Multiple Effects (SEME’s) evolved in SRAMs. SEME’s make the design of SRAM a serious challenge. In this article, a novel Radiation Hardened By Design (RHBD) SRAM bit-cell is proposed based on the polarity upset mechanism of SEUs. This work shows that the proposed RHBD14T SRAM bit-cell is SEU immune and delivers higher SEME critical charge than state-of-the-art RHBD SRAM bit-cells. The Monte Carlo (MC) simulations further show that the proposed RHBD14T SRAM delivers the lower Probability of Failure when compared to reported RHBD SRAM cells. Consequently, the proposed bit cell’s sensitive area is 128% lower with respect to the recently reported state-of-the-art RHBD RSP14T SRAM bit-cells.

中文翻译：

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适用于太空应用的单粒子多重效应耐受 RHBD14T SRAM 单元设计


静态随机存取存储器 (SRAM) 主要用作存储器存储元件，容易受到辐射引起的单粒子扰动 (SEU) 的影响。因此，稳健的 SRAM 位单元设计主要是解决空间辐射环境的一项艰巨任务。此外，随着晶体管的尺寸进入纳米级，SRAM 中出现了单粒子多重效应 (SEME) 等新挑战。 SEME 使 SRAM 的设计成为一项严峻的挑战。在本文中，基于 SEU 的极性翻转机制，提出了一种新颖的抗辐射设计 (RHBD) SRAM 位单元。这项工作表明，所提出的 RHBD14T SRAM 位单元不受 SEU 影响，并且比最先进的 RHBD SRAM 位单元提供更高的 SEME 临界电荷。蒙特卡罗 (MC) 模拟进一步表明，与报道的 RHBD SRAM 单元相比，所提出的 RHBD14T SRAM 的故障概率更低。因此，所提出的位单元的敏感区域比最近报道的最先进的 RHBD RSP14T SRAM 位单元低 128%。