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Band gap opening in tetragonal stanene monolayer by hydrogenation engineering
Solid State Communications ( IF 2.1 ) Pub Date : 2021-03-09 , DOI: 10.1016/j.ssc.2021.114268
Chunyan Xu , Jing Zhang , Zexuan Guo , Xiaoxi Yuan , Yu Tian

Based on first-principles calculations, we systematically investigate the stability, structural and electronic properties of two-dimensional (2D) hydrogenated tetragonal stanene (tetra-SnH). The calculated binding and formation energies, AIMD simulations and phonon dispersion show 2D tetra-SnH is stable. The hydrogenation also affects the electronic structure of tetragonal stanene monolayer, which is transformed from semimetal to semiconductor with a direct band gap. The optical response of 2D tetra-SnH is isotropic along the in-plane directions. Our results demonstrate that hydrogenation is an efficient way to modulate the electronic properties of tetragonal stanene, and provides a new prospect for the potential application in nanoelectronics.



中文翻译:

四方锡单分子层加氢工程的带隙开口。

基于第一性原理计算,我们系统地研究了二维(2D)氢化四方锡(tetra-SnH)的稳定性,结构和电子性质。计算的结合能和形成能,AIMD模拟和声子色散表明2D tetra-SnH是稳定的。氢化还会影响四方锡单层的电子结构,该单层锡从半金属转变为具有直接带隙的半导体。2D tetra-SnH的光学响应沿面内方向各向同性。我们的结果表明,加氢是调节四方锡电子性质的有效方法,并为纳米电子的潜在应用提供了新的前景。

更新日期:2021-04-04
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