The resistive switching mechanism in titanium-dioxide nanoparticles (TiO₂ NP) is studied using the current-voltage (I–V) measurements. The TiO₂ NP are spin-coated on different substrates like FTO, ITO, Gold, and p-Silicon. The I–V measurements are carried out by changing the initial potential of the substrates to either 0 V (sweep1) or −1 V (sweep2). Resistive switching (RS) was observed only for FTO/TiO₂ NP and ITO/TiO₂NP devices in sweep1 direction. Whereas, in sweep2 direction, no such RS was observed in any of the devices. The detailed I–V analysis infers the Ohmic conduction followed by space charge limited conduction (SCLC) during the RS forming process for FTO/TiO₂ NP and ITO/TiO₂NP devices. The Au and p-Si substrates act as blocking contact for TiO₂ and exhibit Schottky/thermionic emission at lower voltages and SCLC at higher voltages. The TiO₂ NP coated on p-Si substrate exhibits rectifying behaviour with a current ratio of 3 orders of magnitude.

使用电流-电压（IV）测量研究了二氧化钛纳米颗粒（TiO ₂ NP）中的电阻切换机制。TiO ₂ NP旋涂在不同的基材上，例如FTO，ITO，金和p-Silicon。通过将基板的初始电势更改为0 V（sweep1）或-1 V（sweep2）进行IV测量。仅在sweep1方向上观察到FTO / TiO ₂ NP和ITO / TiO ₂ NP器件的电阻切换（RS）。而在扫描2方向上，在任何设备中均未观察到此类RS。详细的I–V分析可推断出FTO / TiO ₂ NP和ITO / TiO ₂的RS形成过程中的欧姆传导，然后是空间电荷受限传导（SCLC）NP设备。Au和p-Si衬底充当TiO _2的阻挡接触，并在较低电压下表现出肖特基/热电子发射，而在较高电压下表现出SCLC。涂覆在p-Si衬底上的TiO ₂ NP在3个数量级的电流比下显示出整流行为。