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Blistering of potassium-tantalate single crystals induced by helium implantation
Journal of the Korean Physical Society ( IF 0.6 ) Pub Date : 2021-03-08 , DOI: 10.1007/s40042-021-00115-0
Bingxi Xiang , Huangpu Han , Yujie Ma , Kaige Liu , Lei Wang , Lingbing Kong , Guangyue Chai , Shuangchen Ruan

Potassium-tantalate crystals were implanted with helium ions at 190 keV and then thermally treated at different temperatures to study their blistering. The surface blistering, hydrogen depth distribution, and lattice damage induced by He+ implantation were characterized using secondary ion mass spectroscopy, optical and transmission electron microscopy, and Rutherford backscattering spectrometry. The blistering of potassium-tantalate crystals was achieved at certain ion fluences followed by thermal treatment.



中文翻译:

氦注入引起的钽酸钾单晶起泡

将钽酸钾晶体注入190 keV的氦离子,然后在不同温度下进行热处理以研究其起泡现象。使用二次离子质谱,光学和透射电子显微镜以及卢瑟福背散射光谱法表征了He +注入引起的表面起泡,氢深度分布和晶格损伤。钽离子在某些离子通量下起泡,然后进行热处理。

更新日期:2021-03-08
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