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Enhancement in the critical current density of BaTiO3-doped YBCO films by low-energy (60 keV) proton irradiation
Superconductor Science and Technology ( IF 3.7 ) Pub Date : 2021-03-04 , DOI: 10.1088/1361-6668/abe35f
Daxing Huang 1, 2, 3 , Hongwei Gu 1, 2, 3 , Hongjing Shang 1, 2, 3 , Taiguang Li 1, 2, 3 , Bowei Xie 1, 2, 3 , Qi Zou 1, 2, 3 , Di Chen 4 , Wei-kan Chu 4 , Fazhu Ding 1, 2, 3
Affiliation  

Although YBa2Cu3O72212δ (YBCO) is one of the most promising superconducting materials for power applications, the fabrication of low-cost coated conductors with the high in-field performance remains challenging. Here, we report an efficient mixed-pinning landscape for enhancing the in-field performance of BaTiO3 (BTO)-doped YBCO films by low-energy (60 keV) proton irradiation. The smaller (2–4 nm), weaker but perhaps denser pinning sites have been successfully introduced by irradiation, which can form a mixed-pinning landscape with pre-doped BTO precipitates (5–15 nm), leading to the increased vortex pinning. In this case, the critical current density (J c) of YBCO films increases significantly, especially at low temperature and high magnetic field, and it increases three times near 6 T at 20 K when the irradiation dose is 1 1015 proton cm−2. Additionally, the c-axis length (c-parameter) of YBCO increases with the increase of irradiation dose, which indicates the decreasing oxygen content due to the excessive irradiation, thereby the reduction in critical transition temperature (T c). Employing low irradiation energy is beneficial for protons to stop inside YBCO film and thereby induces higher density defects when applying low doses. This fabrication technique is a practicable post-production solution to improve the in-field performance of nanoparticle-doped YBCO films.



中文翻译:

低能(60 keV)质子辐照增强BaTiO 3掺杂YBCO薄膜的临界电流密度

虽然的YBa 2的Cu 3 ö 72212δ(YBCO)是用于功率应用的最有前途的超导材料中的一种,低成本涂布导体的与场性能仍然具有挑战性的高的制造。在这里,我们报告了一种有效的混合钉扎景观,可通过低能(60 keV)质子辐照增强BaTiO 3(BTO)掺杂的YBCO薄膜的场内性能。较小的(2-4 nm),较弱但可能更密集的钉扎位点已通过辐射成功引入,它可以与预掺杂的BTO沉淀物(5-15 nm)形成混合钉扎景观,从而导致涡旋钉扎增加。在这种情况下,临界电流密度(J c)的YBCO膜显着增加,特别是在低温和强磁场下,当辐射剂量为1 10 15质子cm -2时,在20 K处6 T附近,YBCO膜增加3倍。此外,YBCO的c轴长度(c参数)随着辐照剂量的增加而增加,这表明由于过度辐照导致氧含量降低,从而降低了临界转变温度(T c)。采用低辐照能量有利于质子在YBCO膜内部停止,从而在应用低剂量时引起更高的密度缺陷。这种制造技术是一种可行的后期生产解决方案,可以提高掺杂纳米颗粒的YBCO薄膜的场内性能。

更新日期:2021-03-04
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