Low-frequency noise is one of the important characteristics of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) that is susceptible to oxide traps. Drain-source voltage noise models of 4H-SiC MOSFETs under low–drain-voltage and inverse condition were proposed by considering the spatial and energy non-uniform distribution of the oxide trap, based on the McWhoter model for uniform trap distribution. This study performed noise experiments on commercial 4H-SiC MOSFETs, and revealed that the non-uniform spatial and non-uniform energy distribution caused new 1/f noise phenomenon, different from that under uniform spatial and energy distribution. By combining experimental data and theoretical models, the spatial and energy distribution of oxide traps of these samples were determined.

低频噪声是易受氧化物陷阱影响的4H-SiC金属氧化物半导体场效应晶体管（MOSFET）的重要特性之一。在McWhoter模型的基础上，考虑氧化物陷阱的空间和能量非均匀分布，提出了在低漏极电压和反向条件下的4H-SiC MOSFET的漏极-源极电压噪声模型。这项研究在商用4H-SiC MOSFET上进行了噪声实验，结果表明，不均匀的空间和不均匀的能量分布会引起新的1 / f噪声现象，这与均匀的空间和能量分布下的现象不同。通过结合实验数据和理论模型，确定了这些样品的氧化物陷阱的空间和能量分布。