Ageing effect on the performance of Ag/ITO/MoO_x/n-Si/LiF_x/Al carrier selective contact (CSC) silicon solar cells has been investigated based on silicon surface morphology (planar, different pyramid sizes, and chemical polishing of pyramids). The cells with small silicon pyramids (~2 µm) have shown better stability with time than the medium/large pyramids (~5/~8 µm). The chemical polishing of pyramid peaks and valleys has further reduced the cells ageing effect due to minimization of the microstructural stress (tensile in the valleys and compressive at the peaks) at the MoO_x/n-Si interface, which has been verified indirectly with cells fabricated on a planar surface. The cell’s performance degradation based on morphology points out the instability of the MoO_x layer and Schottky barrier reduction, which results in hole-transport hindrance at the MoO_x/n-Si junction with the S-shape in J-V graphs under illumination. The ageing effect on device performance is further investigated using the Sentaurus TCAD simulations with the MoO_x layer work function variation, and the study indicates the band bending reduction (minimal carrier inversion) and hole transport barrier at the junction region.

基于硅表面形态（平面，不同的金字塔尺寸和金字塔的化学抛光），研究了老化对Ag / ITO / MoO _x / n-Si / LiF _x / Al载流子选择性接触（CSC）硅太阳能电池性能的影响。 ）。具有小硅棱锥（〜2 µm）的电池在时间上表现出比中/大棱锥（〜5 /〜8 µm）更好的稳定性。由于最小化了MoO _x / n-Si界面的微结构应力（在谷中拉伸而在峰处具有压缩性），金字塔峰和谷的化学抛光进一步降低了细胞的老化效果，该现象已通过电池间接验证在平面上制造。基于形态的电池性能下降指出了MoO的不稳定性_x层和肖特基势垒的减少，导致在光照条件下在JV图中具有S形的MoO _x / n-Si结处的空穴传输受阻。使用具有MoO _x层功函数变化的Sentaurus TCAD模拟，进一步研究了老化对器件性能的影响，该研究表明，结区的能带弯曲减小（最小载流子反转）和空穴传输势垒。