As an important part of three-dimensional (3D) magnetic sensors, the vertical Hall devices directly determine the overall performance of the sensors. However, the traditional vertical Hall devices (5CVHD) have large offset and low sensitivity due to an inherent electrical asymmetry. In order to solve this problem, the traditional five-contact vertical Hall devices are optimized to obtain the five-contact vertical Hall devices with slim waist (SW-5CVHD) in this paper, and an anti-parallel coupling method which is suitable for the devices is applied. In addition, based on TCAD software, this paper gives a new 3D process simulation model that is more accurate than the traditional 2D model. The 3D simulation results show that the SW-5CVHD have higher sensitivity and lower initial offset compared to the traditional 5CVHD. After applying the anti-parallel coupling method, the novel devices achieve a higher symmetry by double identical SW-5CVHD interconnected into what we call the anti-parallel coupling double SW-5CVHD (APSW-5CVHD). As the structure of APSW-5CVHD is fully symmetrical, which can be better combined with the spinning current technology for offset cancellation. As a simulation result, with a bias voltage of 1V and after spinning current a mean equivalent residual offset of 60.0µT with a standard deviation of 74.4µT is achieved among 15 samples. Moreover, the Hall voltage sensitivity is approximately 21.7mV/VT at 1V bias voltage.

作为三维（3D）磁传感器的重要组成部分，垂直霍尔器件直接决定了传感器的整体性能。但是，由于固有的电气不对称性，传统的垂直霍尔器件（5CVHD）具有较大的失调和较低的灵敏度。为了解决这个问题，本文对传统的五触点垂直霍尔器件进行了优化，以获得腰部纤细的五触点垂直霍尔器件（SW-5CVHD），并且提出了一种适合于这种情况的反并联耦合方法。设备已应用。此外，基于TCAD软件，本文提供了一种新的3D过程仿真模型，该模型比传统的2D模型更准确。3D仿真结果表明，与传统的5CVHD相比，SW-5CVHD具有更高的灵敏度和更低的初始偏移。在采用反并联耦合方法之后，新型器件通过将两个相同的SW-5CVHD互连到我们称为反并联耦合双SW-5CVHD（APSW-5CVHD）中来实现更高的对称性。由于APSW-5CVHD的结构是完全对称的，因此可以与自旋电流技术更好地结合使用以抵消偏移。作为仿真结果，在1V的偏置电压和旋转电流之后，在15个样本中获得了60.0µT的平均等效残余偏移和74.4µT的标准偏差。此外，在1V偏置电压下，霍尔电压灵敏度约为21.7mV / VT。由于APSW-5CVHD的结构是完全对称的，因此可以与自旋电流技术更好地结合使用以抵消偏移。作为仿真结果，在1V的偏置电压和旋转电流之后，在15个样本中获得了60.0µT的平均等效残余偏移和74.4µT的标准偏差。此外，在1V偏置电压下，霍尔电压灵敏度约为21.7mV / VT。由于APSW-5CVHD的结构是完全对称的，因此可以与自旋电流技术更好地结合使用以抵消偏移。作为仿真结果，在1V的偏置电压和旋转电流之后，在15个样本中获得了60.0µT的平均等效残余偏移和74.4µT的标准偏差。此外，在1V偏置电压下，霍尔电压灵敏度约为21.7mV / VT。