Magnetic domain walls are potential data carriers in future spintronic devices and the application based on current-driven domain wall (DW) motion primarily relies on the effective control of the moving velocity of the DW and its structural stability. In this work, the propagation of the magnetic domain walls along a ferromagnetic nanowire with a localized temperature region is studied by micromagnetic simulation. The research indicates that the local temperature field can suppress the generation of Walker breakdown (WB) and make the transverse domain wall (TDW) move to a longer distance with a stable structure. The degree of suppression is the result of the joint influence of temperature difference (ΔT) and temperature region width (d). When both of the ΔT and the d are relatively large, the suppression effect is comparatively strong, while either of the ΔT and the d are small, the suppression effect is weak. The results reveal the local temperature field makes the exchange energy in the region reach a very high value rapidly, and the out-of-plane magnetic moment M_z of the DW keeps at a high level, which promotes the high-speed motion of the DW and suppresses the WB by destroying the periodic transition of the DW structure.

磁畴壁是未来自旋电子设备中的潜在数据载体，基于电流驱动的畴壁（DW）运动的应用主要依赖于DW移动速度及其结构稳定性的有效控制。在这项工作中，通过微磁模拟研究了磁畴壁沿着具有局部温度区域的铁磁纳米线的传播。研究表明，局部温度场可以抑制沃克击穿（WB）的产生，并使横向畴壁（TDW）向更长的距离移动，并具有稳定的结构。抑制程度是温度差（ΔT）和温度区域宽度（d）共同影响的结果。当两个ΔT当d和d相对较大时，抑制效果相对较强，而ΔT和d均较小，则抑制效果较弱。结果表明，局部温度场使该区域的交换能量迅速达到很高的值，而DW的面外磁矩M _z保持在较高水平，从而促进了DW的高速运动。 DW并通过破坏DW结构的周期性过渡来抑制WB。