In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I–V) measurements. The I–V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (±4 V) at room temperature. To determine gamma-irradiation effects on the MPS-type SDs accurately, one SD was preferred as a sample, and its significant electrical parameters such as zero-bias barrier height (Φ_B0), ideality factor (n), and reverse-saturation-current (I₀) were calculated using the linear parts of the ln(I)–V characteristics. Besides, to observe the effects of gamma-rays on MPS-type SDs in different voltage regions, some diode parameters were obtained by different calculation methods such as Cheung and Norde functions as well as Thermionic Emission (TE) theory. The calculations showed that high doses of gamma-irradiation (>5 kGy) caused the annealing effect, which leads to an improvement in some electrical parameters of SD, especially in the high electric field region. On the other hand, the energy distribution of the surface states (N_ss) was obtained by utilizing the voltage-dependent ideality factor and the effective barrier height, with and without considering the series resistance (R_s) effect. It was observed that N_ss values decreased almost as exponentially from the mid-band gap of the semiconductor towards the upper edge of the valance-band. Also, the density of surface states decreased with increasing radiation doses. As a result, almost all diode parameters are affected by irradiation. However, no significant defect has been detected that would affect the stable operation of the diode. Hence, Al/(ZnO-PVA)/p-Si type SD can be used as an MPS-type detector instead of MIS/MOS-type detectors due to some advantages of the organic/polymer interlayer such as being cheap, light per molecule, flexible and requiring low energy consumption.

在这项研究中，生产了Al /（ZnO-PVA）/ p-Si（MPS）型肖特基二极管（SD），并使用电流-电压（IV）测量了辐射对其电性能的影响。的I-V测量照射之前，在室温下的各种辐射剂量在宽的电压范围（±4 V）之后进行。以确定对MPS型SDS准确γ辐射的影响，一个SD被优选作为样品，其显著电参数，诸如零偏置势垒高度（Φ _B0），理想因子（Ñ）和反向saturation-使用ln（I）–V的线性部分计算电流（I ₀）特征。此外，为了观察伽玛射线在不同电压区域对MPS型SD的影响，通过不同的计算方法（例如Cheung和Norde函数以及热电子发射（TE）理论）获得了一些二极管参数。计算表明，高剂量的伽马射线辐照（> 5 kGy）会引起退火效应，从而导致SD的某些电参数有所改善，尤其是在高电场区域。另一方面，在考虑和不考虑串联电阻（R _s）影响的情况下，利用依赖于电压的理想因子和有效势垒高度来获得表面态（N _ss）的能量分布。观察到N _ss从半导体的中带隙到价带的上边缘，指数值几乎成指数下降。而且，表面状态的密度随着辐射剂量的增加而降低。结果，几乎所有的二极管参数都受到辐照的影响。但是，没有发现会影响二极管稳定工作的重大缺陷。因此，由于有机/聚合物中间层的一些优点，例如便宜，每分子轻，Al /（ZnO-PVA）/ p-Si型SD可以用作MPS型检测器而不是MIS / MOS型检测器灵活，能耗低。