The photoluminescence properties of spray pyrolyzed strontium (Sr) doped tin oxide (SnO₂:Sr) thin films are presented. These transparent nano-films are found to have polycrystalline tetragonal structure. A nano-needle like grains were observed up to 1 wt% Sr doping, whereas polyhedron like grains were seen at 1.5 wt% of Sr doping. A redshift of 110 meV in the optical bandgap was obtained for SnO₂:Sr(1 wt%) thin film and is attributed to defect states induced and reorientation effect caused upon Sr doping. The improvement in n-type conductivity observed for 1 wt% Sr doped tin oxide thin films is ascribed to increase in the carrier concentration and mobility. The observed increment in the intensity of visible emissions in SnO₂:Sr (1 wt%) films is attributed to oxygen vacancy related recombination on Sr doping. Obtained results of SnO₂:Sr are compared with those of pure SnO₂ film and we find enhancement in the photoluminescence intensity when doped with Sr.

提出了喷涂热解锶（Sr）掺杂的氧化锡（SnO ₂：Sr）薄膜的光致发光特性。发现这些透明的纳米膜具有多晶的四边形结构。观察到纳米针状晶粒高达1％（重量）的Sr掺杂，而多面体状晶粒则为1.5％（重量）的Sr掺杂。对于SnO ₂：Sr（1 wt％）薄膜，在光学带隙中出现了110 meV的红移，这归因于诱发的缺陷状态和掺杂Sr引起的重新取向效应。对于1重量％的掺Sr的氧化锡薄膜观察到的n型电导率的改善归因于载流子浓度和迁移率的增加。观察到的SnO ₂中可见光发射强度的增加：Sr（1 wt％）薄膜归因于Sr掺杂时与氧空位相关的重组。将SnO ₂：Sr的获得结果与纯SnO ₂膜的结果进行比较，我们发现掺杂Sr时光致发光强度增强。