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Photoluminescence in Strontium doped tin oxide thin films
Optical Materials ( IF 3.8 ) Pub Date : 2021-03-05 , DOI: 10.1016/j.optmat.2021.110962
Basavaraj G. Hunashimarad , J.S. Bhat , P.V. Raghavendra , R.F. Bhajantri

The photoluminescence properties of spray pyrolyzed strontium (Sr) doped tin oxide (SnO2:Sr) thin films are presented. These transparent nano-films are found to have polycrystalline tetragonal structure. A nano-needle like grains were observed up to 1 wt% Sr doping, whereas polyhedron like grains were seen at 1.5 wt% of Sr doping. A redshift of 110 meV in the optical bandgap was obtained for SnO2:Sr(1 wt%) thin film and is attributed to defect states induced and reorientation effect caused upon Sr doping. The improvement in n-type conductivity observed for 1 wt% Sr doped tin oxide thin films is ascribed to increase in the carrier concentration and mobility. The observed increment in the intensity of visible emissions in SnO2:Sr (1 wt%) films is attributed to oxygen vacancy related recombination on Sr doping. Obtained results of SnO2:Sr are compared with those of pure SnO2 film and we find enhancement in the photoluminescence intensity when doped with Sr.



中文翻译:

锶掺杂氧化锡薄膜的光致发光

提出了喷涂热解锶(Sr)掺杂的氧化锡(SnO 2:Sr)薄膜的光致发光特性。发现这些透明的纳米膜具有多晶的四边形结构。观察到纳米针状晶粒高达1%(重量)的Sr掺杂,而多面体状晶粒则为1.5%(重量)的Sr掺杂。对于SnO 2:Sr(1 wt%)薄膜,在光学带隙中出现了110 meV的红移,这归因于诱发的缺陷状态和掺杂Sr引起的重新取向效应。对于1重量%的掺Sr的氧化锡薄膜观察到的n型电导率的改善归因于载流子浓度和迁移率的增加。观察到的SnO 2中可见光发射强度的增加:Sr(1 wt%)薄膜归因于Sr掺杂时与氧空位相关的重组。将SnO 2:Sr的获得结果与纯SnO 2膜的结果进行比较,我们发现掺杂Sr时光致发光强度增强。

更新日期:2021-03-07
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