In this article, we characterize and model two parasitic effects that become apparent in the performance of coplanar waveguide interconnects in CMOS. One is the transverse resistance introduced by a patterned ground shield in coplanar waveguide interconnects, which significantly contributes to the shunt losses. The other one is the parasitic coupling between the input and output ports through the ground shield. The latter effect is particularly accentuated in relatively short lines and complicates the determination of the propagation constant using line–line algorithms at several tens of gigahertz. We demonstrate that using the proposed methodology, excellent model–experiment correlation can be achieved in the modeling of these types of interconnects up to at least 60 GHz.

中文翻译：

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确定接地屏蔽损耗对片上共面波导微波性能的贡献

在本文中，我们对两种寄生效应进行了表征和建模，这两种效应在CMOS共平面波导互连的性能中变得显而易见。一种是由共面波导互连中的图案化接地屏蔽引入的横向电阻，这会极大地导致分流损耗。另一个是通过接地屏蔽的输入和输出端口之间的寄生耦合。后一种效应在相对较短的行中尤为突出，并且在几十GHz处使用线-线算法确定传播常数变得很复杂。我们证明，使用提出的方法，可以在至少60 GHz的这些类型的互连建模中实现出色的模型与实验相关性。