This article presents the design of integrated antennas in the D-band (110-170 GHz). First, an electromagnetic analysis is used to tune the propagation characteristics of surface waves supported on an artificial magnetic conductor (AMC). Next, a subarray of two miniaturized dipoles is designed where each dipole attains axial resonance and the separation between them is optimized for substrate wave cancellation. This subarray simultaneously performs spatial power combining and substrate wave cancellation, leading to significant increase of the effective isotropic radiated power (EIRP). Two miniaturized dipoles with axial length of 252 μm and spacing of 450 μm was fabricated in 28 nm bulk CMOS with low resistivity silicon (10 Q·cm). Each dipole is fed by a cascade of two triplers and a power amplifier. Measurements show a gain of 2.3 dBi, EIRP of 12.2 dBm at 139 GHz and a 3 dB bandwidth of 127-154 GHz (19% fractional) without using any additional substrates, lenses, or postprocessing steps. Scalability of this technique for forming larger arrays is also presented.

中文翻译：

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采用 28 nm Bulk CMOS 的小型化（127 至 154）GHz 偶极子阵列，效率更高


本文介绍了 D 频段 (110-170 GHz) 集成天线的设计。首先，使用电磁分析来调整人造磁导体 (AMC) 上支持的表面波的传播特性。接下来，设计了两个小型偶极子的子阵列，其中每个偶极子都获得轴向谐振，并且优化了它们之间的间隔以消除基底波。该子阵列同时执行空间功率组合和基底波抵消，从而显着增加有效各向同性辐射功率（EIRP）。采用低电阻率硅 (10 Q·cm) 在 28 nm 体 CMOS 中制造了两个轴向长度为 252 μm、间距为 450 μm 的微型偶极子。每个偶极子由两个三联器和一个功率放大器的级联馈送。测量结果显示，在 139 GHz 时增益为 2.3 dBi，EIRP 为 12.2 dBm，3 dB 带宽为 127-154 GHz（19% 小数），无需使用任何额外的基板、透镜或后处理步骤。还介绍了该技术形成更大阵列的可扩展性。