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Analytical Model of Dielectric Modulated Trench Double Gate Junctionless FET for Biosensing Applications
IEEE Sensors Journal ( IF 4.3 ) Pub Date : 2021-02-02 , DOI: 10.1109/jsen.2021.3056385
Sandeep Kumar , Balraj Singh , Yashvir Singh

A 2-D analytical model of a dielectric modulated trench double gate junctionless FET (DM-TDGJLFET) is developed for label-free detection of biomolecules. The channel potential is obtained by solving the 2-D Poisson’s equation using the parabolic approximation with appropriate boundary conditions. The drain current and threshold voltage are obtained from the minimum channel potential. The proposed DM-TDGJLFET structure has two gates which are vertically placed in separate trenches. The two cavities for biomolecules immobilization are carved in the gate oxide region. The DM-TDGJLFET has been studied for threshold voltage sensitivity of neutral as well as charged biomolecules. For neutral biomolecules, the shift in threshold voltage is obtained as $745 {mV}$ for change in dielectric constant ( ${k}$ ) from 1 to 12. The DM-TDGJLFET performance is also evaluated using commercially available $ {ATLAS}^{ {TM}}$ device simulator. The model results show good agreement with simulated data.

中文翻译:

用于生物传感的介电调制沟槽双栅极无结FET的分析模型

开发了介电调制沟槽双栅极无结FET(DM-TDGJLFET)的二维分析模型,用于无标记检测生物分子。通过在适当的边界条件下使用抛物线近似法求解二维泊松方程,即可获得通道电势。漏极电流和阈值电压是从最小沟道电势获得的。提出的DM-TDGJLFET结构具有两个垂直放置在单独沟槽中的栅极。在栅氧化层区域刻有两个固定生物分子的腔体。已经对DM-TDGJLFET的中性和带电生物分子的阈值电压灵敏度进行了研究。对于中性生物分子,阈值电压的偏移为 $ 745 {mV} $ 介电常数的变化( $ {k} $ )从1到12。DM-TDGJLFET的性能也使用市售的器件进行评估。 $ {ATLAS} ^ {{TM}} $ 设备模拟器。模型结果与仿真数据吻合良好。
更新日期:2021-03-05
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