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A Common Drain Operational Amplifier Using Positive Feedback Integrated by Metal-Oxide TFTs
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2021-02-19 , DOI: 10.1109/jeds.2021.3060954
Xiang-Lin Mei , Zhuo-Jia Chen , Wen-Xing Xu , Lei Zhou , Wei-Jing Wu , Jian-Hua Zou , Miao Xu , Lei Wang , Yu-Rong Liu , Jun-Biao Peng

This paper presents a common-drain-based operational amplifier (OPAMP) fabricated by mono n-type indium-zinc-oxide (IZO) thin-film transistors (TFTs). Positive feedback technology is employed to the load TFTs by cross-coupled connection in order to boost the voltage gain of the common-drain differential pair. The OPAMP exhibits an open-loop voltage gain (A v ) of 27 dB over a −3 dB bandwidth (BW) of 8.4 kHz at a DC supply voltage of 10 V. The measured unity-gain frequency (UGF), phase margin (PM) and DC power consumption are 119.4 kHz, 36° and 0.96 mW, respectively. Moreover, the chip area of the proposed OPAMP is as small as 0.37 mm $\times0.3$ mm since this concise topology needs only 10 TFTs.

中文翻译:

利用金属氧化物TFT集成正反馈的通用漏极运算放大器

本文提出了一种由单n型铟锌氧化物(IZO)薄膜晶体管(TFT)制造的基于共漏极的运算放大器(OPAMP)。正反馈技术通过交叉耦合连接应用于负载TFT,以提高共漏极差分对的电压增益。 在10 V的直流电源电压下,OPAMP在8.4 kHz的-3 dB带宽(BW)上表现出27 dB的开环电压增益(A v)。测得的单位增益频率(UGF),相位裕度( PM)和DC功耗分别为119.4 kHz,36°和0.96 mW。此外,拟议的运算放大器的芯片面积小至0.37毫米 $ \ times0.3 $ 毫米,因为这种简洁的拓扑仅需要10个TFT。
更新日期:2021-03-05
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