This Review describes behaviors and mechanisms governing heteroepitaxial nucleation and growth of group III (Al, Ga, and In)–selenium (Se) based semiconductors by molecular beam epitaxy and the properties of the resultant nanoscale films. With nine bonding electrons per ${\mathrm{A}}^{\mathrm{III}}\text{–}{\mathrm{B}}^{\mathrm{VI}}$ pair, these chalcogenide semiconductors crystallize in a variety of locally tetrahedral bulk structures that incorporate intrinsic vacancies (atom-sized voids) lined with doubly occupied lone-pair orbitals, including layered, defected zinc blende and defected wurtzite structures. During heteroepitaxial growth, the choice of how the vacancies order and which phase results, as well as interface reactions, intermixing, surface passivation, and film morphology, are controlled by electron counting, substrate symmetry, and size mismatch. Nucleation and growth of $\mathrm{A}{\mathrm{l}}_x\mathrm{S}{\mathrm{e}}_y$, $\mathrm{G}{\mathrm{a}}_x\mathrm{S}{\mathrm{e}}_y$, and $\mathrm{I}{\mathrm{n}}_x\mathrm{S}{\mathrm{e}}_y$ compounds on Si and GaAs, including initial reactions, layer nucleation, symmetry, crystal structure, defects, dimensionality, and stoichiometry, were studied with a combination of techniques, including photoelectron spectroscopy, x-ray photoelectron diffraction, scanning tunneling microscopy, x-ray absorption spectroscopy, and low energy electron diffraction. The unique crystal structure of $\mathrm{G}{\mathrm{a}}_2\mathrm{S}{\mathrm{e}}_3$ was also investigated as a novel platform for doping with transition metals to create a dilute magnetic semiconductor: $\mathrm{Cr}:\mathrm{G}{\mathrm{a}}_2\mathrm{S}{\mathrm{e}}_3$ is ferromagnetic at room temperature, while $\mathrm{Mn}:\mathrm{G}{\mathrm{a}}_2\mathrm{S}{\mathrm{e}}_3$ results in the precipitation of MnSe. The present study provides new insight into growing interest in variable dimensional materials, using group III selenides as prototypes, to address the basic physical chemistry governing the heteroepitaxy of dissimilar materials.

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第三类硒化物：通过缺陷和异质外延生长控制尺寸，结构和性能

这篇综述描述了通过分子束外延控制基于III族（Al，Ga和In）-硒（Se）的半导体的异质外延形核和生长的行为和机理，以及所得纳米级薄膜的特性。每个有九个键合电子${\mathrm{一种}}^{\mathrm{三级}}\text{–}{\mathrm{乙}}^{\mathrm{六号}}$对，这些硫族化物半导体会在各种局部四面体块状结构中结晶，这些结构包含内在的空位（原子尺寸的空隙），内衬有双占据的孤对轨道，包括层状缺陷的锌共混物和缺陷的纤锌矿结构。在异质外延生长期间，通过电子计数，衬底对称性和尺寸失配来控制对空位顺序和相相的选择以及界面反应，混合，表面钝化和膜形态的选择。成核和生长$\mathrm{一种}{\mathrm{升}}_X\mathrm{小号}{\mathrm{Ë}}_{ÿ}$， $\mathrm{G}{\mathrm{一种}}_X\mathrm{小号}{\mathrm{Ë}}_{ÿ}$， 和 $\mathrm{一世}{\mathrm{ñ}}_X\mathrm{小号}{\mathrm{Ë}}_{ÿ}$利用包括光电子能谱，X射线光电子衍射，扫描隧道显微镜，X射线在内的多种技术研究了Si和GaAs上的化合物，包括初始反应，层成核，对称性，晶体结构，缺陷，尺寸和化学计量。吸收光谱和低能电子衍射。独特的晶体结构$\mathrm{G}{\mathrm{一种}}_{\mathrm{2个}}\mathrm{小号}{\mathrm{Ë}}_3$ 还被研究用作掺杂过渡金属以创建稀磁半导体的新型平台： $\mathrm{铬}：\mathrm{G}{\mathrm{一种}}_{\mathrm{2个}}\mathrm{小号}{\mathrm{Ë}}_3$ 在室温下是铁磁性的，而 $\mathrm{锰}：\mathrm{G}{\mathrm{一种}}_{\mathrm{2个}}\mathrm{小号}{\mathrm{Ë}}_3$导致MnSe沉淀。本研究以III类硒化物为原型，解决了控制异种材料异质外延的基本物理化学问题，为人们对可变尺寸材料的日益增长的兴趣提供了新的见解。