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Thermal ranges and figures of merit for gold-containing precursors for atomic layer deposition
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2021-01-27 , DOI: 10.1116/6.0000707
Matthew B. E. Griffiths 1 , Zachary S. Dubrawski 2 , Peter G. Gordon 1 , Marcel Junige 3 , Seán T. Barry 1
Affiliation  

This is a survey of known gold-containing chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to easily assess the thermal characteristics (“volatilization temperature” and the onset of decomposition]) important in the initial assessment of molecules as potential ALD precursors. Of the 46 compounds that were identified, 23 had sufficient thermal data reported in the literature to determine a σ value. The two known gold ALD precursors (15, σ = 104 and 22, σ = 44) were both shown to be in a cluster of excellent precursors. They were each the best in their families of precursors, measured by their σ and their onset of volatility. It was also found that many potentially excellent gold ALD precursors had gold in the +3 oxidation state. Some gold(I) compounds were identified as having good figures of merit (28, σ = 78, 29, σ = 32, 36, σ = 31), but 28 and 29 were found to undergo a reductive elimination reaction at growing gold surfaces, which is a common CVD deposition route for gold(I) compounds. β-diketonates and β-ketoiminates of gold were the most encouraging family of compounds, with σ values of greater than 50. This family contained the precursor with the highest figure of merit (9, σ = 212). These compounds are difficult to make in high yield, but an alternate synthetic route that was identified during this survey might serve to make this class of gold compound competitive as a precursor.

中文翻译:

原子层沉积含金前体的热范围和品质因数

这是对已知的含金化学气相沉积(CVD)和原子层沉积(ALD)前驱物的调查,重点是收集其挥发和分解数据。这些数据被应用到一个品质因数(σ),该品质因数被开发用来轻松评估对作为潜在ALD前体的分子进行初始评估时很重要的热特性(“挥发温度”和分解的开始])。在鉴定出的46种化合物中,有23种在文献中报道了足够的热数据以确定σ值。两种已知的金ALD前驱物(15,σ= 104和22,σ= 44)均显示在一组出色的前体中。通过σ和波动的开始,它们都是前体家族中最好的。还发现许多潜在优良的金ALD前体具有处于+3氧化态的金。一些金(I)的化合物被鉴定为具有优点的良好的数字(28,σ= 78,29,σ= 32,36,σ= 31),但2829被发现在生长的金表面发生还原消除反应,这是金(I)化合物的常见CVD沉积途径。金的β-二酮酸酯和β-酮酸酯是最令人鼓舞的化合物,其σ值大于50。该族包含品质因数最高的前体(9,σ= 212)。这些化合物很难以高收率制得,但是在本次调查中确定的替代合成途径可能有助于使此类金化合物具有竞争优势。
更新日期:2021-03-05
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