Gallium-doped magnesium zinc oxide (GMZO) holds promise as a UV transparent conducting oxide with tunable bandgap and conductivity, though there has been relatively limited exploration of the broad compositional space available. Conductive GMZO films were deposited by reactive cosputtering at room temperature followed by annealing. The contributions of alloying and the Burstein–Moss effect to the optical bandgap were decoupled through comparisons of as-deposited and annealed films. Compositional analysis in conjunction with electrical characterization was used to quantify the activation of Ga doping in MZO. Combinatorial synthesis was used to explore the optoelectronic performance over a broad composition space. Reactive cosputtering can be used to tailor GMZO properties for optoelectronic applications over a wide range of bandgaps (3.3–4 eV) and resistivity (10⁻³–>100 Ω cm) through appropriate control of the Mg/Zn ratio and Ga content, respectively.

中文翻译：

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通过反应共溅射控制镓掺杂的氧化镁锌中的导带排列和载流子浓度

掺杂镓的氧化锌镁（GMZO）有望成为具有可调带隙和导电性的UV透明导电氧化物，尽管对可用的广泛组成空间的研究相对有限。导电GMZO膜是通过在室温下进行反应共溅射，然后进行退火来沉积的。通过比较沉积薄膜和退火薄膜，可以消除合金化作用和Burstein-Moss效应对光学带隙的影响。结合电学表征的成分分析用于量化MZO中Ga掺杂的活化。组合合成被用来探索在广泛的组成空间内的光电性能。反应性共溅射可用于在广泛的带隙范围内为光电应用定制GMZO特性（3。⁻³ –> 100Ωcm）分别通过适当地控制Mg / Zn比和Ga含量来实现。