In microelectronic or nanoelectronic manufacturing, pattern transfer by directional reactive ion etching (RIE) progressively erodes amorphous carbon (aC) hard masks. To maintain critical dimensions and tolerances of high-aspect-ratio device structures, new carbonaceous materials may be added repeatedly to replace the eroded aC hard mask. Such a mask repairing step during RIE needs self-aligning growth of organic materials. Area selectivity is required to deposit the organic material on the aC hard mask exclusively. Deposition on the dielectric or semiconductor device structures underlying the mask would complicate their precise etching or later cleaning. When ashing the aC hard mask, all-organic materials are preferable to organic-inorganic hybrid materials because they leave no residue. In this work, area-selective molecular layer deposition (MLD) was developed for the all-organic polyamide nylon 6,2. The monomer reactants for nylon 6,2 MLD were ethylene diamine and adipoyl chloride. Nylon 6,2 MLD was studied in the homogeneous, steady-state growth regime and during nucleation on various starting surfaces utilizing in situ spectroscopic ellipsometry. Area-selective MLD of nylon 6,2 was achieved on the “growth” carbon surface in the presence of silica by functionalizing aC via mild oxidation. In addition, a surface passivant was selectively attached to silica by using an amine-catalyzed coupling chemistry. The passivant inhibited the nylon 6,2 MLD on the “nongrowth” silica surface. A single passivation pretreatment was sufficient to restrict the MLD on the silica surface. The passivant, however, did not substantially impact the MLD nucleation and growth on the aC surface. This strategy yielded area selectivity with exceptionally high quality and over a wide range of MLD cycles. The area-selective MLD of nylon 6,2 was further applied on industrial test features with aC patterns masking trenches in silica. This demonstration illustrated the capability of area-selective MLD to repair RIE-eroded aC hard masks and to maintain the critical dimension.

中文翻译：

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尼龙6,2聚酰胺的区域选择性分子层沉积：在碳上的生长和对二氧化硅的抑制

在微电子或纳米电子制造中，通过定向反应离子刻蚀（RIE）进行的图案转移会逐渐侵蚀非晶碳（aC）硬掩模。为了维持高纵横比设备结构的关键尺寸和公差，可以反复添加新的含碳材料，以代替腐蚀的aC硬掩模。RIE期间的这种掩模修复步骤需要有机材料的自对准生长。需要区域选择性才能将有机材料专门沉积在aC硬掩模上。在掩模下面的电介质或半导体器件结构上的沉积将使它们的精确刻蚀或随后的清洁复杂化。在灰化aC硬掩模时，全有机材料优于有机无机杂化材料，因为它们不会留下任何残留物。在这项工作中，针对全有机聚酰胺尼龙6,2开发了区域选择性分子层沉积（MLD）。尼龙6，2 MLD的单体反应物是乙二胺和己二酰氯。研究了尼龙6,2 MLD在均质，稳态生长过程中以及在各种起始表面上的成核过程中，利用原位光谱椭圆偏振法。在二氧化硅存在下，通过温和氧化功能化aC，在“生长”碳表面上实现了尼龙6,2的区域选择性MLD。另外，通过使用胺催化的偶联化学方法将表面钝化剂选择性地连接至二氧化硅。钝化剂抑制了“未生长的”二氧化硅表面上的尼龙6,2 MLD。一次钝化预处理足以将MLD限制在二氧化硅表面上。但是，钝化剂并没有实质性地影响aC表面MLD的成核和生长。这种策略可在广泛的MLD循环范围内以极高的质量产生区域选择性。尼龙6,2的区域选择性MLD进一步应用于工业测试功能，其aC图案掩盖了二氧化硅中的沟槽。