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Multi-technique investigation of Ni-doped ZnO thin films on sapphire by metalorganic chemical vapor deposition
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2021-02-05 , DOI: 10.1116/6.0000816
Jiwei Chen 1, 2, 3 , Jiabin Wang 1 , Vishal Saravade 4 , Ian T. Ferguson 5 , Weiguo Hu 1, 2 , Zhe Chuan Feng 1, 3 , Lingyu Wan 1, 3
Affiliation  

Optical and material properties of nickel-doped zinc oxide (ZnO-Ni) grown by metalorganic chemical vapor deposition with varying Ni source flow rates are investigated. ZnO-Ni showed a good crystal quality with (002) orientation but deteriorated at high Ni source flow rates. Photoluminescence responses show a reduction in the bandgap of ZnO-Ni with an increase in the Ni source flow and also with an increase in the temperature. Ni-doping can enhance luminescences at low concentrations (<25 SCCM and ∼2%) and suppress at high concentrations. Ni-related defects occur more toward the surface than bulk of the thin films. Longitudinal optical phonon replicas named 1LO and 2LO redshifts at low Ni source flow rates ≤100 SCCM with an increase in the temperature from 14 to 300 K, but exhibits an “S-shaped” red-blue-red shift with a dip at 50 K at higher Ni source flow rates (150 SCCM). Ni-doping also induces asymmetric crystal vibrations and rougher surfaces with the Ni incorporation. This study enhances the understanding of Ni-doped ZnO that is needed to apply transition-metal doped ZnO for various optoelectronic applications.

中文翻译:

金属有机化学气相沉积技术研究蓝宝石表面掺Ni的ZnO薄膜的多技术研究

研究了通过金属有机化学气相沉积法制备的掺杂镍的氧化锌(ZnO-Ni)的光学和材料特性,其中Ni的流量不同。ZnO-Ni在(002)方向上显示出良好的晶体质量,但在高Ni源流量下会劣化。光致发光响应表明,随着Ni源流量的增加以及温度的升高,ZnO-Ni的带隙减小。镍掺杂可以在低浓度(<25 SCCM和〜2%)时增强发光,而在高浓度时可以抑制发光。与镍相关的缺陷比薄膜的体积更容易向表面产生。在低Ni源流量≤100 SCCM的情况下,名为1LO和2LO的纵向光学声子复制品会发生红移,并且温度会从14 K升高到300 K,但在较高的镍源流量(150 SCCM)下,在50 K处出现“ S形”红-蓝-红偏移。掺入镍还会引起不对称的晶体振动和掺入镍的粗糙表面。这项研究增强了对掺有镍的ZnO的理解,这对于在各种光电应用中应用过渡金属掺杂的ZnO是必需的。
更新日期:2021-03-05
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