The design of β-Ga₂O₃-based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of β-Ga₂O₃ are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation-doped layer that is distinguished by an inflection in the transconductance curve.

中文翻译：

---

Ga2O3调制掺杂场效应晶体管的设计

的β-Ga的设计₂ ö ₃系调制掺杂场效应晶体管与一个焦点上的自加热和电子迁移率分布的所得变形例的作用进行讨论。温度和电子迁移率以及的热导率的温度和定向相关的近似值的掺杂依赖性模型的β-Ga ₂ ö ₃被提出。漏极电流的减少归因于由耦合的自热机制和高电场迁移率降低机制引起的位置相关的迁移率降低。提出了一种简单的热管理解决方案，其中通过源接触金属提取热量。另外，示出了在调制掺杂层处可能形成不期望的次级沟道，该次级沟道的特征在于跨导曲线中的弯曲。