CaBi₂Nb₂O₉ thin film capacitors were fabricated on SrRuO₃-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi₂Nb₂O₉ thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density W_rec ≈ 69 J/cm³ and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 10⁹ charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

CABI ₂的Nb ₂ ö ₉薄膜电容器在上的SrRuO制造₃ -缓冲的Pt（111）/钛/硅（100）衬底上通过采用两步制造工艺。此过程将低温溅射沉积与快速热退火（RTA）结合在一起以抑制晶粒生长，目的是延迟极化饱和并降低铁电磁滞。通过这种方法，获得了具有均匀分布的纳米晶粒的CaBi ₂ Nb ₂ O ₉薄膜，该薄膜表现出大的可回收能量密度W _rec≈69 J / cm ³和高能量效率η≈82.4％。还实现了优异的抗疲劳性（10 ^9个充放电循环后的能量性能下降可忽略不计）和良好的热稳定性（从-170到150°C）。这种两步法可用于制备具有增强的能量存储性能的其他铋层结构的铁电薄膜电容器。