We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p⁺–n simple abrupt junction and vertical mesa termination. The reverse I–V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52GHz at a power of ∼56mW.

中文翻译：

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X波段GaN IMPATT二极管的实验演示

我们报告了 X 波段 GaN 碰撞电离雪崩时间传输 (IMPATT) 二极管中微波振荡的首次实验演示。本研究中使用的器件是具有 ap ⁺ -n 简单突变结和垂直台面终止的单漂移二极管。二极管的反向I - V特性显示出低泄漏电流、清晰的雪崩击穿和高雪崩能力，这符合 IMPATT 操作的要求。微波测试是在具有减小高度的波导谐振腔的 X 波段波导电路中进行的。在 9.52GHz 处观察到振荡，功率约为 56mW。