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Indium Tin Oxide with High Carrier-Collection Capacity and Radiation Resistance for GaInP Solar Cell
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-04 , DOI: 10.1002/pssa.202000804 Pan Dai 1, 2 , Junhua Long 2 , Qiangjian Sun 2 , Yuanyuan Wu 2 , Ming Tan 2 , Shulong Lu 2
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-04 , DOI: 10.1002/pssa.202000804 Pan Dai 1, 2 , Junhua Long 2 , Qiangjian Sun 2 , Yuanyuan Wu 2 , Ming Tan 2 , Shulong Lu 2
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The crystal structure, light transmittance, and contact resistivity of transparent conducting indium-tin-oxide (ITO) films for a III–V solar cell are studied. The optical transparency of ITO can reach 96% under appropriate annealing conditions. ITO and n+-GaAs can form Ohmic contacts having a lower contact resistance than those formed with ITO and n+-GaInP. A specially designed solar cell structure is fabricated to grow the ITO film as the front electrode and thus prevent oxidation of the AlInP window layer. Three different GaInP solar cells with pure ITO and ITO/metal grid electrode structures are designed and compared. The results indicate that the ITO electrode has good carrier-collection ability. After irradiation with 1 MeV energy electrons with an electron fluence of 1 × 1015 e cm−2, the remaining factor of the GaInP solar cells with a pure ITO electrode is ≈98%. The results indicate that ITO films have significant application potential in space solar cell manufacturing.
中文翻译：
GaInP太阳能电池具有高载流子收集能力和抗辐射能力的氧化铟锡
研究了III–V型太阳能电池的透明导电铟锡氧化物（ITO）膜的晶体结构，透光率和接触电阻率。在适当的退火条件下，ITO的光学透明性可以达到96％。ITO和n + -GaAs可以形成欧姆接触，该欧姆接触的接触电阻比用ITO和n + -GaInP形成的接触电阻低。专门设计的太阳能电池结构经过制造，以生长ITO膜作为前电极，从而防止了AlInP窗口层的氧化。设计并比较了三种不同的具有纯ITO和ITO /金属栅电极结构的GaInP太阳能电池。结果表明，ITO电极具有良好的载流子收集能力。用1 MeV能量辐照后，电子注量为1×10在15 e cm -2的情况下，具有纯ITO电极的GaInP太阳能电池的剩余因子约为98％。结果表明，ITO膜在空间太阳能电池制造中具有重要的应用潜力。
更新日期：2021-03-04
中文翻译：
GaInP太阳能电池具有高载流子收集能力和抗辐射能力的氧化铟锡
研究了III–V型太阳能电池的透明导电铟锡氧化物（ITO）膜的晶体结构，透光率和接触电阻率。在适当的退火条件下，ITO的光学透明性可以达到96％。ITO和n + -GaAs可以形成欧姆接触，该欧姆接触的接触电阻比用ITO和n + -GaInP形成的接触电阻低。专门设计的太阳能电池结构经过制造，以生长ITO膜作为前电极，从而防止了AlInP窗口层的氧化。设计并比较了三种不同的具有纯ITO和ITO /金属栅电极结构的GaInP太阳能电池。结果表明，ITO电极具有良好的载流子收集能力。用1 MeV能量辐照后，电子注量为1×10在15 e cm -2的情况下，具有纯ITO电极的GaInP太阳能电池的剩余因子约为98％。结果表明，ITO膜在空间太阳能电池制造中具有重要的应用潜力。
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