Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure,Physica Status Solidi (A) - Applications and Materials Science

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Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-04 , DOI: 10.1002/pssa.202000802
Vincenzo De Michele _{1,

2} , Emmanuel Marin ₁ , Aziz Boukenter ₁ , Marco Cannas ₂ , Sylvain Girard ₁ , Youcef Ouerdane ₁

Affiliation

The nature of the radiation-induced point defects in amorphous silica is investigated through online photoluminescence (PL) under high intensity ultrashort laser pulses. Using 1030 nm femtosecond laser pulses with a repetition rate of 1 kHz, it is possible to study the induced color centers through their PL signatures monitored during the laser exposure. Their generation is driven by the nonlinear absorption of the light related to the high pulse peak powers provided by femtosecond laser, allowing to probe the optical properties of the laser exposed region. The experiment is conducted as a function of the laser pulse power in samples with different OH contents. The results highlight the different interaction regimes attained by varying the irradiation conditions for various chemical compositions. Moreover, the online measurements are combined with postmortem characterization of the damaged area, via phase contrast microscopy, Raman and steady-state PL spectroscopies, highlighting the potential of these online femtosecond tests to provide additional knowledge to the postmortem technique ones.

中文翻译：

飞秒激光曝光二氧化硅中点缺陷的光致发光

通过在高强度超短激光脉冲下的在线光致发光 (PL) 研究了非晶二氧化硅中辐射诱导的点缺陷的性质。使用重复率为 1 kHz 的 1030 nm 飞秒激光脉冲，可以通过在激光曝光期间监测的 PL 特征来研究诱导色心。它们的产生是由与飞秒激光提供的高脉冲峰值功率相关的光的非线性吸收驱动的，允许探测激光暴露区域的光学特性。该实验是根据具有不同 OH 含量的样品中的激光脉冲功率进行的。结果突出了通过改变各种化学成分的辐照条件而获得的不同相互作用方式。而且，

更新日期：2021-03-04

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