In this work, the impact of the parasitic effects caused by discontinuities on Resonant Rotary Traveling Wave Oscillators (RTWO) for RF-CMOS applications, is analyzed and modeled. By using experimental data in addition to the full wave representation, semi-empirical models are obtained for different discontinuities contained in an RTWO. Then, using the proposed models and 180 nm CMOS process parameters, an RTWO was designed with an operating frequency of 20 GHz, whilst the impact of the discontinuities was quantified in its output signal. The results show that the impact of the parasitic elements due to these discontinuities present a filtering effect leading to a distortion of the magnitude and number of harmonics in the output signal, with a reduction of 13.8% when the effects of the geometrical discontinuities were included. In order to mitigate the parasitic effects due to discontinuities, the use of topological (layout) methods in stack paths and the Möbius connection are proposed. Additionally, a process variation analysis was conducted and the results show that the operation frequency could vary in a range from 17.21 GHz to 18.91 GHz; while the output voltage could fluctuate between 1.17 V and 1.91 V depending on the process, bias voltage and temperature (PVT) conditions. These effects must be taken into account in the design of RTWOs to avoid inefficient tuning stages, especially for high frequency applications, and for advanced technologies where the impact of the analyzed discontinuities is increased.

在这项工作中，分析和建模了由不连续引起的寄生效应对RF-CMOS应用的共振旋转行波振荡器（RTWO）的影响。通过使用除全波表示之外的实验数据，获得了RTWO中包含的不同间断的半经验模型。然后，使用提出的模型和180 nm CMOS工艺参数，设计了工作频率为20 GHz的RTWO，同时在其输出信号中量化了不连续性的影响。结果表明，由于这些不连续性引起的寄生元件的影响呈现出滤波效果，导致输出信号中谐波的幅度和数量发生失真，当包括几何不连续性的影响时，滤波效果降低了13.8％。为了减轻由于不连续引起的寄生效应，提出了在堆栈路径和Möbius连接中使用拓扑（布局）方法的建议。此外，进行了工艺变化分析，结果表明工作频率可以在17.21 GHz至18.91 GHz的范围内变化。而输出电压则可能在1.17 V和1.91 V之间波动，具体取决于工艺，偏置电压和温度（PVT）条件。在RTWO的设计中必须考虑这些影响，以避免无效的调谐阶段，尤其是对于高频应用以及对于分析不连续性的影响增加的先进技术而言。进行了工艺变化分析，结果表明工作频率可以在17.21 GHz至18.91 GHz的范围内变化。而输出电压则可能在1.17 V和1.91 V之间波动，具体取决于工艺，偏置电压和温度（PVT）条件。在RTWO的设计中必须考虑到这些影响，以避免无效的调谐阶段，尤其是对于高频应用以及对于分析的不连续性影响增加的先进技术而言。进行了工艺变化分析，结果表明工作频率可以在17.21 GHz至18.91 GHz的范围内变化。而输出电压则可能在1.17 V和1.91 V之间波动，具体取决于工艺，偏置电压和温度（PVT）条件。在RTWO的设计中必须考虑这些影响，以避免无效的调谐阶段，尤其是对于高频应用以及对于分析不连续性的影响增加的先进技术而言。