The interaction of nitrogen monoxide (NO) with 0.8 monolayer of silicon, deposited onto rutile single crystal surface SiO_x/TiO₂ (1 1 0)-(1 × 2), has been studied by means of X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS), and Auger electron spectroscopy (AES), in order to characterize the interaction of NO, up to 200 langmuir at room temperature, with the SiO_x/TiO₂ interface. This interaction resulted in the oxidation of titanium species, as well as a weak reduction of silicon species. Furthermore, adsorbed nitrogen is not detected on the surface. These results suggest that the adsorption is dissociative, characterized by a Freundlich isotherm.

利用X射线和紫外光电子能谱研究了一氧化氮（NO）与沉积在金红石单晶表面SiO _x / TiO ₂（1  1  0）-（1×2）上的0.8单层硅的相互作用。（XPS和UPS）和俄歇电子能谱（AES），以表征室温下高达200 langmuir的NO与SiO _x / TiO ₂界面的相互作用。这种相互作用导致钛物质的氧化，以及硅物质的弱还原。此外，在表面上未检测到吸附的氮。这些结果表明吸附是解离的，其特征是弗氏等温线。