In this research, we will show that as the flow rates of CF₄ (CF4/(Ar + CF4)) are different, the optical, crystal, and electrical properties of FZO films have large variations. At first, ZnO target is prepared by ourselves, the radio frequency (RF) magnetron sputtering is used as a method for the deposition of FZO films, and different flow rates of CF₄ gas is introduced into the chamber during the deposition process. Next, we use the EagleXG glass as the substrates to deposit FZO films and we control the deposition time to make the thicknesses of deposited FZO films at about 330 nm. The flow rate of CF₄ gas is controlled using CF4/(Ar + CF4) mixing atmosphere and it is changed from 0% to 0.5%. After FZO films are deposited, their crystalline phase is identified using XRD, surface morphology and thickness that are observed using SEM, optical property (which is further used to measure the optical energy gap) are measured using an n&k analyzer, and electrical properties are measured using Hall equipment. A comparative study on the residual fluorine is also analyzed using FESEM equipped with energy dispersive X-ray spectroscopy (EDS) analysis.

中文翻译：

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不同CF4流量下氧化锌薄膜的性能研究

在这项研究中，我们将表明，作为 CF ₄ (CF4/(氩 + CF4))不同的是，FZO薄膜的光学、晶体和电学性能差异很大。首先，自行制备ZnO靶材，采用射频（RF）磁控溅射作为沉积FZO薄膜的方法，在沉积过程中将不同流量的CF ₄气体引入腔室。接下来，我们使用 EagleXG 玻璃作为基板来沉积 FZO 薄膜，我们控制沉积时间以使沉积的 FZO 薄膜的厚度在 330 nm 左右。_{CF 4}气体的流量由CF控制4/(氩 + CF4)混合气氛，由 0% 变为 0.5%。FZO薄膜沉积后，使用XRD鉴定其晶相，使用SEM观察表面形态和厚度，使用n&k分析仪测量光学性质（进一步用于测量光学能隙），并测量电学性质使用霍尔设备。还使用配备能量色散 X 射线光谱 (EDS) 分析的 FESEM 分析了对残留氟的比较研究。