Helicity-multiplexed metasurfaces based on symmetric spin–orbit interactions (SOIs) have practical limits because they cannot provide central-symmetric holographic imaging. Asymmetric SOIs can effectively address such limitations, with several exciting applications in various fields ranging from asymmetric data inscription in communications to dual side displays in smart mobile devices. Low-loss dielectric materials provide an excellent platform for realizing such exotic phenomena efficiently. In this paper, we demonstrate an asymmetric SOI-dependent transmission-type metasurface in the visible domain using hydrogenated amorphous silicon (a-Si:H) nanoresonators. The proposed design approach is equipped with an additional degree of freedom in designing bi-directional helicity-multiplexed metasurfaces by breaking the conventional limit imposed by the symmetric SOI in half employment of metasurfaces for one circular handedness. Two on-axis, distinct wavefronts are produced with high transmission efficiencies, demonstrating the concept of asymmetric wavefront generation in two antiparallel directions. Additionally, the CMOS compatibility of a-Si:H makes it a cost-effective alternative to gallium nitride (GaN) and titanium dioxide (TiO₂) for visible light. The cost-effective fabrication and simplicity of the proposed design technique provide an excellent candidate for high-efficiency, multifunctional, and chip-integrated demonstration of various phenomena.

基于对称自旋轨道相互作用（SOI）的螺旋复用超表面具有实际限制，因为它们无法提供中心对称全息成像。非对称 SOI 可以有效地解决这些限制，在各个领域都有一些令人兴奋的应用，从通信中的非对称数据写入到智能移动设备中的双面显示。低损耗介电材料为有效实现这种奇异现象提供了绝佳的平台。在本文中，我们使用氢化非晶硅 (a-Si:H) 纳米谐振器展示了可见光域中的不对称 SOI 相关传输型超表面。所提出的设计方法在设计双向螺旋复用超表面方面具有额外的自由度，打破了对称 SOI 在半使用超表面以实现单旋手性方面所施加的传统限制。以高传输效率产生两个同轴、不同的波前，展示了在两个反平行方向上产生不对称波前的概念。此外，a-Si:H 的 CMOS 兼容性使其成为可见光领域氮化镓 (GaN) 和二氧化钛 (TiO ₂ ) 的经济高效替代品。所提出的设计技术具有成本效益的制造和简单性，为各种现象的高效、多功能和芯片集成演示提供了极好的候选方案。