Thin films of the natural semiconductor indigo have been grown on Si/SiO₂ substrates by physical vapor deposition under ultra-high vacuum conditions, monitoring the influence of the deposition rate on structure, morphology and thickness. This was done to allow well-defined films to be made in a controlled way, suitable for the manufacture of organic devices and the investigation of charge transport phenomena. The films have been characterized by X-ray diffraction, atomic force microscopy, microRaman spectroscopy and transmission electron microscopy, finding that the growth at the solid interface of polymorph B, the only phase present in the films, is governed by the formation of strong multiple hydrogen-bonds between neighbouring molecules, which play a predominant role in the interface organization of the molecular assemblies.

天然半导体靛蓝薄膜已在Si / SiO ₂上生长在超高真空条件下通过物理气相沉积法沉积基材，监测沉积速率对结构，形态和厚度的影响。这样做是为了以受控的方式制造清晰的薄膜，适用于制造有机器件和研究电荷传输现象。通过X射线衍射，原子力显微镜，显微拉曼光谱和透射电子显微镜对薄膜进行了表征，发现薄膜中唯一存在的多晶型物B的固相界面处的生长受强多晶形成的支配。相邻分子之间的氢键在分子组装体的界面组织中起主要作用。