Polar optical phonon assisted momentum relaxation, power dissipation and spin relaxation are studied in GaAs. We adopt the drifted Maxwellian approach in the investigation, where the hot phonons are incorporated via the longitudinal polar optical phonon mechanism in the momentum relaxation. Stating from the rate of change of phonon occupancy in a relaxation time approximation, the hot phonon generation and the electronic power dissipation in the drifted Maxwellian are obtained. The results display the runaway effect, where the enhanced scattering rate reduces the drift velocity so that the field at which runaway occurs is increased in order to achieve the necessary power input. Hot phonons thus tend to stabilize the polar interaction and the reduction of drift velocity. The electron temperature and spin relaxation is also found to increase with the electric field. However, at the moderate fields the spins are found to be almost conserved. The spin relaxation is rapid at higher fields and is almost infinite for field higher than 300 mV μm⁻¹, which might be the result of increase of the electron temperature at higher fields and, consequently, the higher Dyakonov-Perel spin relaxation frequency.

在GaAs中研究了极性光学声子辅助的动量弛豫，功率耗散和自旋弛豫。我们在研究中采用了漂移麦克斯韦方法，其中热声子通过纵极光学声子机制并入了动量松弛中。从弛豫时间近似值中声子占有率的变化率出发，可以得出漂移的麦克斯韦流变中热声子的产生和电子功率的耗散。结果显示了失控效应，其中增强的散射速率降低了漂移速度，因此增加了发生失控的场，以实现必要的功率输入。因此，热声子趋于稳定极性相互作用并降低漂移速度。还发现电子温度和自旋弛豫随电场而增加。但是，在中等磁场下，自旋几乎保持不变。自旋弛豫在较高的场中是快速的，而对于高于300 mVμm的场几乎是无限的^-1，这可能是在较高电场下电子温度升高的结果，因此，在Dyakonov-Perel自旋弛豫频率较高的情况下。