In this study, the thermally-induced nonlinear optical properties, near the band edge of one-dimensional Si/SiO_x photonic crystal, were investigated. The crystal was fabricated with alternating layers of silicon and silicon oxide, deposited using reactive magnetron sputtering. The fabricated sample showed a stop band, centered at 1050 nm with 400 nm range. The nonlinear optical properties were obtained using standard z-scan technique, stimulated by cw laser system. In this regime, the crystal's periodic structure was approximated with an effective uniform medium. When the pumping wavelength was near the band edge of the photonic crystal, transmittance enhancements at low input powers were observed. At higher input powers, reverse saturable absorber behavior became dominant. The analysis of the nonlinear processes based on resonant heating and increase in light absorption near the band edge is presented.

在这项研究中，热诱导的非线性光学性质，在一维Si / SiO _x的能带边缘附近研究了光子晶体。使用反应磁控溅射沉积的硅和氧化硅交替层制造晶体。制成的样品显示出阻带，阻带中心在1050 nm处，波长为400 nm。非线性光学性质是通过标准的z扫描技术获得的，并由连续激光系统激发。在这种情况下，晶体的周期性结构近似于有效的均匀介质。当泵浦波长接近光子晶体的能带边缘时，在低输入功率下观察到透射率增强。在较高的输入功率下，反向可饱和吸收器性能占主导地位。提出了基于共振加热和带边缘附近光吸收增加的非线性过程的分析。