A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode. Besides, by coupling the gate of the dummy MOSFET to the source, a built-in channel diode is introduced, which provides a unipolar reverse conduction current path and drastically reduces the gate-to-drain charge. When the proposed MOSFET serves as the freewheeling diode, the reverse-biased P-base Schottky diode inactivates the P-base/N-drift junction diode, so that the reverse current will be carried out by the built-in channel diode. As a result, in comparison with the planar gate power MOSFET, the reverse recovery charge and the gate-to-drain charge could be reduced by 96.9 % and 75.4%, respectively.

中文翻译：

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具有P基肖特基二极管和内置沟道二极管的功率MOSFET，可实现快速反向恢复

本文提出了一种具有P基肖特基二极管和内置沟道二极管的功率MOSFET，并对其进行了数值研究。由P基极肖特基触点形成的P基肖特基二极管与P基极/ N漂移结二极管反向串联。此外，通过将伪MOSFET的栅极耦合至源极，引入了内置沟道二极管，该二极管提供了单极性反向传导电流路径，并大大减少了栅极至漏极的电荷。当建议的MOSFET用作续流二极管时，反向偏置的P基肖特基二极管会使P基极/ N漂移结二极管失活，因此反向电流将由内置的沟道二极管来实现。结果，与平面栅极功率MOSFET相比，反向恢复电荷和栅极至漏极电荷可减少96.9％和75.4％，