Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 $\mu \text{A}$ /cm ² at 1250 V), excellent forward characteristics (ideality factor ~1.6), and low specific on-resistance (1.1 $\text{m}\Omega $ .cm ² ) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial ${n}$ -GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to ${p}$ -GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation.

中文翻译：

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刻蚀和再生长GaN pn-截止电压为1600 V的二极管

具有高击穿电压（1610 V）和低反向漏电流（1 nA = 6）的蚀刻和再生长GaN pn二极管 $ \ mu \ text {A} $ / cm ²在1250 V时），出色的正向特性（理想因子〜1.6）和低导通电阻（1.1） $ \ text {m} \ Omega $ 通过减小再生长界面处与等离子体蚀刻有关的缺陷，可实现约 .cm ²）。外延的 $ {n} $ 使用感应耦合等离子体刻蚀（ICP）刻蚀在独立式GaN衬底上通过金属有机化学气相沉积法生长的-GaN层，并且我们证明了慢反应离子刻蚀（RIE）之前 $ {p} $ 与湿法化学表面处理相比，-GaN再生长可显着提高二极管的电气性能。没有结终止扩展（JTE）的蚀刻和再生二极管的特征是将ICP后RIE方法与其他ICP后处理的先前研究进行比较，以比较二极管的性能。然后，使用多步JTE制造在再生之前使用ICP后RIE刻蚀步骤的刻蚀和再生二极管，以演示kV级操作。