Self-Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self-Catalyzed GaAs Nanowires,Physica Status Solidi (B) - Basic Solid State Physics

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Self-Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self-Catalyzed GaAs Nanowires
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-03-02 , DOI: 10.1002/pssb.202000604
Alexander A. Koryakin _{1,

2} , Sergey A. Kukushkin _{1,

3}

Affiliation

Self-catalyzed GaAs nanowire (NW) growth via the vapor–liquid–solid mechanism is investigated by a theoretical model including the kinetics of material transport inside the catalyst droplet. The proposed model allows the description of nucleation and growth of 2D islands on the top facet of GaAs NWs. Analytical expressions for the growth rate of the disk-shaped GaAs island due to the volume diffusion of species in the droplet and for the attachment rate of GaAs pairs to the critical island are derived. As a result, the duration of the droplet refilling stage and the island growth stage at typical growth conditions of self-catalyzed GaAs NWs are obtained by a self-consistent calculation. Also, the time evolution of the droplet composition and the island radius are found. The derived equations for the island growth rate can be applied for modeling of catalyst-assisted growth of other III–V compounds. The results of the modeling are in good agreement with the experimental data on self-catalyzed GaAs NW growth via molecular beam epitaxy and can be used for the optimization of the NW growth conditions.

中文翻译：

自催化 GaAs 纳米线顶面二维孤岛成核和生长的自洽建模

通过包括催化剂液滴内材料传输动力学的理论模型研究了通过气-液-固机制自催化的 GaAs 纳米线 (NW) 生长。所提出的模型允许描述 GaAs NW 顶面上的 2D 岛的成核和生长。导出了由于液滴中物质的体积扩散导致的盘状 GaAs 岛的生长速率和 GaAs 对与临界岛的附着率的解析表达式。因此，通过自洽计算获得了自催化 GaAs NWs 在典型生长条件下的液滴再填充阶段和岛生长阶段的持续时间。此外，还发现了液滴组成和岛半径的时间演变。导出的岛生长速率方程可用于模拟其他 III-V 族化合物的催化剂辅助生长。建模结果与通过分子束外延自催化 GaAs NW 生长的实验数据非常吻合，可用于 NW 生长条件的优化。

更新日期：2021-03-02

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