Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H₂⁺ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects of the implanted H atoms that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

与单晶SiC相比，据报道，具有高堆积缺陷密度的纳米SiC具有更强的抗自离子和电子辐射下非晶化的能力。这项研究检查了H ₂ ⁺透射电子显微镜观察具有密集堆积缺陷的纳米晶3C-SiC中的离子辐照诱导非晶化。结果表明，在相同的辐照条件下，室温下的完全非晶化以与其单晶SiC对应物相当的剂量发生。由于局部损伤累积，两种材料均被非晶化。堆垛层错和晶界的存在对非晶化成核位点的形成没有明显的影响。该行为可能归因于注入的H原子的显着化学作用，该化学作用在室温下可以完全固定SiC中的点缺陷。结果表明在室温下在高H辐射环境中使用纳米晶SiC材料应谨慎行事。