This work reports the electrical-transport and temperature-dependent photoconductivity in tungsten diselenide (WSe₂) thin films. Temperature-dependent electrical conductivity has been demonstrated using different models. At lower temperatures (< 190 K), carriers become localized to small regions in the film due to Mott’s hopping mechanism. The middle-temperature region (190–273 K) follows Seto’s parameters and obtained low barrier height (0.0873 eV) may be responsible for the improved carrier mobility. At higher temperature (> 273 K) region, thermally activated conduction is dominated with two activation energies of ~138 meV and 98 meV. The peaks obtained in photoluminescent analysis attributes to the presence of mid-bandgap states or defect states which play an important role in the photoconductivity of WSe₂. The transient photoconductivity measurements show consistent temperature-dependent behaviour. The effect of light intensity and wavelength variation on the photoconductivity of WSe₂ thin films is also discussed. The photo-current is 1.19 * 10⁻⁵ A at 125 K, while at 350 K was observed to be 3.12 * 10⁻⁴ A. The light-on/off current cycles show that the current can recover to its initial state after various cycles, which points to the WSe₂ thin-film device's stable and reversible properties that can be used in optoelectronic applications.

这项工作报告了二硒化钨（WSe ₂）薄膜中的电传输和温度相关的光电导性。已经使用不同的模型证明了温度相关的电导率。在较低的温度（<190 K）下，由于莫特的跳跃机制，载流子变得局限于薄膜中的小区域。中间温度区域（190–273 K）遵循Seto的参数，并且获得的低势垒高度（0.0873 eV）可能是改善载流子迁移率的原因。在较高温度（> 273 K）区域，热激活的传导主要由〜138 meV和98 meV的两个激活能量决定。在光致发光分析中获得的峰归因于中带隙态或缺陷态的存在，它们在WSe的光电导中起重要作用₂。瞬态光电导率测量显示出一致的温度依赖性行为。还讨论了光强度和波长变化对WSe ₂薄膜光电导性的影响。在125 K时，光电流为1.19 * 10 ^-5 A，而在350 K时，光电流为3.12 * 10 ^-4A。开/关电流周期表明，经过各种变化，电流可以恢复到其初始状态。周期，这表明WSe ₂薄膜器件具有稳定且可逆的特性，可用于光电应用。