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Fabrication of a 1024 × 1024 format long wavelength infrared focal plane array based on type-II superlattice and barrier enhanced structure
Infrared Physics & Technology ( IF 3.1 ) Pub Date : 2021-03-02 , DOI: 10.1016/j.infrared.2021.103700
Fangfang Wang , Zhicheng Xu , Zhizhong Bai , Hui Li , Yi Zhou , Jianxin Chen , Li He

1024 × 1024 format long-wavelength infrared focal plane arrays are realized using type-II superlattice material with a double-barrier enhanced structure grown on 3″ GaSb substrate. The detector structure material exhibits excellent crystalline quality and uniformity. A 100% cutoff wavelength of ~11.8 μm was obtained at 82 K. A dark current density of 1.4 × 10−6 A/cm2 and a differential resistance-area product RA of 4.7 × 104 Ωcm2 at 49 K, 3.6 × 10−5 A/cm2 and 2.8 × 103 Ωcm2 at 70 K, and 2.5 × 10−4 A/cm2 and 5.5 × 102 Ωcm2 at 82 K, at a reverse bias of ~ 50 mV, were obtained, respectively. At zero bias, the R0A was 5.1 × 104 Ωcm2, 290.6 Ωcm2, and 35.6 Ωcm2 at 49 K, 70 K, and 82 K, respectively. Noise equivalent temperature differences of 37.4 mK at 82 K and 31.9 mK at 70 K were achieved with an integration time of 0.12 ms, a 300 K background and f/2.0 optics. The large format FPA also shows excellent imaging.



中文翻译:

基于II型超晶格和势垒增强结构的1024×1024格式长波长红外焦平面阵列的制作

使用具有在3英寸GaSb衬底上生长的具有双势垒增强结构的II型超晶格材料来实现1024×1024格式的长波长红外焦平面阵列。检测器结构材料显示出优异的结晶质量和均匀性。在1.4×10 82 K.暗电流密度得到的〜11.8微米的100%截止波长-6 A /厘米2和4.7×10的差分电阻面积乘积RA 4 Ωcm以下2 49 K,3.6× 10 -5 A /厘米2和2.8×10 3 Ωcm以下2在70 K,和2.5×10 -4 A /厘米2和5.5×10 2 Ωcm的2分别在82 K下获得〜50 mV的反向偏置。在零偏压时,R 0 A为5.1×10 4 Ωcm的2,290.6Ωcm的2,以及35.6欧姆厘米2分别在49 K,70 K,和82 K,。积分时间为0.12 ms,背景为300 K和f / 2.0光学元件时,在82 K下噪声等效温度差为37.4 mK,在70 K下噪声等效温度差为31.9 mK。大幅面FPA还显示出出色的成像效果。

更新日期:2021-03-07
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