1024 × 1024 format long-wavelength infrared focal plane arrays are realized using type-II superlattice material with a double-barrier enhanced structure grown on 3″ GaSb substrate. The detector structure material exhibits excellent crystalline quality and uniformity. A 100% cutoff wavelength of ~11.8 μm was obtained at 82 K. A dark current density of 1.4 × 10⁻⁶ A/cm² and a differential resistance-area product RA of 4.7 × 10⁴ Ωcm² at 49 K, 3.6 × 10⁻⁵ A/cm² and 2.8 × 10³ Ωcm² at 70 K, and 2.5 × 10⁻⁴ A/cm² and 5.5 × 10² Ωcm² at 82 K, at a reverse bias of ~ 50 mV, were obtained, respectively. At zero bias, the R₀A was 5.1 × 10⁴ Ωcm², 290.6 Ωcm², and 35.6 Ωcm² at 49 K, 70 K, and 82 K, respectively. Noise equivalent temperature differences of 37.4 mK at 82 K and 31.9 mK at 70 K were achieved with an integration time of 0.12 ms, a 300 K background and f/2.0 optics. The large format FPA also shows excellent imaging.

使用具有在3英寸GaSb衬底上生长的具有双势垒增强结构的II型超晶格材料来实现1024×1024格式的长波长红外焦平面阵列。检测器结构材料显示出优异的结晶质量和均匀性。在1.4×10 82 K.暗电流密度得到的〜11.8微米的100％截止波长^-6 A /厘米²和4.7×10的差分电阻面积乘积RA ⁴ Ωcm以下² 49 K，3.6× 10 ^-5 A /厘米²和2.8×10 ³ Ωcm以下²在70 K，和2.5×10 ^-4 A /厘米²和5.5×10 ² Ωcm的²分别在82 K下获得〜50 mV的反向偏置。在零偏压时，R ₀ A为5.1×10 ⁴ Ωcm的²，290.6Ωcm的²，以及35.6欧姆厘米²分别在49 K，70 K，和82 K，。积分时间为0.12 ms，背景为300 K和f / 2.0光学元件时，在82 K下噪声等效温度差为37.4 mK，在70 K下噪声等效温度差为31.9 mK。大幅面FPA还显示出出色的成像效果。