A GaAs quantum-well laser diode was directly grown on silicon (001) substrate by a hybrid technique comprising AlAs nucleation and thermal cycle annealing. The hybrid technique provided the advantages of superior surface roughness, high quantum efficiency, and low threading dislocation density (TDD) of a thin buffer. The TDD was quantitatively characterized through the electron channeling contrast imaging method. Directly grown GaAs on Si exhibited a TDD of 5.45 × 10⁷ /cm² with small thickness of approximately 1.5 µm. The roughness and quantum efficiency of GaAs on Si was enhanced by adopting the nucleation layer of AlAs. We found that there exists an optimal thickness of AlAs nucleation to be 1.68 nm through structural and optical analysis. Based on optimized GaAs on Si, the GaAs quantum-well laser diode was directly grown with a TDD of 2.5 × 10⁷ /cm². Whole epitaxial layers were grown by metalorganic chemical vapor deposition. An edge-emitting broad stripe laser diode was successfully fabricated with a cavity length and width of 1120 µm and 60 µm, respectively. The continuous-wave lasing at room temperature was realized with a threshold current density of 643 A/cm² and maximum output power of 19.7 mW at a single facet, where a threshold current density of 317 A/cm² was obtained under pulsed operation condition. This result would constitute a building block to realize silicon-based on-chip light sources.

中文翻译：

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通过最佳AlAs成核和热循环退火在Si（001）上单片生长GaAs激光二极管

通过包括AlAs成核和热循环退火的混合技术，将GaAs量子阱激光二极管直接生长在硅（001）衬底上。混合技术的优点是薄的缓冲区具有出色的表面粗糙度，高量子效率和低线程位错密度（TDD）。通过电子通道对比成像方法对TDD进行了定量表征。在Si上直接生长的GaAs的TDD为5.45×10 ⁷ / cm ²厚度约为1.5 µm。通过采用AlAs形核层，可以提高GaAs在Si上的粗糙度和量子效率。通过结构和光学分析，我们发现AlAs成核的最佳厚度为1.68 nm。基于Si上优化的GaAs，以2.5×10 ⁷ / cm ²的TDD直接生长GaAs量子阱激光二极管。通过金属有机化学气相沉积来生长整个外延层。成功地制造了腔边缘长度和宽度分别为1120 µm和60 µm的边缘发射宽带激光二极管。在室温下以643 A / cm ²的阈值电流密度实现了连续波激射单面最大输出功率为19.7 mW，在脉冲操作条件下获得的阈值电流密度为317 A / cm ²。该结果将构成实现基于硅的片上光源的基础。