ABSTRACT

The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analysed in relation to band-gap shrinkage and Urbach edge slope increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channelling spectroscopy is addressed by taking into account point-defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of self-absorption of scattered light associated with damage build-up.

中文翻译：

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重离子辐照在碳化硅中引起的无序

摘要

分析了重离子辐照后碳化硅拉曼光谱中晶体声子峰强度的下降与晶格无序积累引起的带隙收缩和Urbach边坡增加的关系。通过考虑点缺陷的形成和位移损伤的非晶化，可以解决由拉曼光谱和卢瑟福背散射通道光谱学推论得到的非晶部分的差异。根据与损伤累积有关的散射光的自吸收，对拉曼数据进行了新的分析。