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Cu metallisation on glass substrate with through glass via using wet plating process
Transactions of the IMF ( IF 1.2 ) Pub Date : 2021-03-01 , DOI: 10.1080/00202967.2021.1877471
M. Takayama 1, 2 , K. Inoue 1 , H. Honma 3 , M. Watanabe 3
Affiliation  

ABSTRACT

The IoT (Internet of Things) society will be arriving in the near future, and many things will be connected by the Internet. Consequently, data traffic will be increased, and so will the demand to improve the performance of communication devices. Currently, plastics and ceramics are commonly used as insulating materials for communication components, but they are getting close to the limit in terms of material properties, because the next generation high-performance communication devices require signal frequency of 20 GHz and beyond. Therefore, further improvements in the properties of the insulating materials as well as in the performance of electronic devices are being demanded. A glass substrate with copper film provides more advantages for electronics devices than other materials. The most obvious advantage is given by the material properties, surface smoothness, dimensional stability in high temperature, low conductivity, low dielectric loss and for its scalability to larger area panels with low cost. In the present study, the authors report on an adhesion strength of 0.4 kN m−1 between glass and copper seed layer. Moreover, a wet plating process has been successfully demonstrated which enables easy and uniform film formation on a glass wafer and inside through holes.



中文翻译:

使用湿法镀覆玻璃通过通孔在玻璃基板上进行铜金属化

摘要

物联网(IoT)社会将在不久的将来到来,并且许多事物将通过互联网进行连接。因此,数据流量将增加,因此改善通信设备性能的需求也将增加。当前,塑料和陶瓷通常用作通信组件的绝缘材料,但是由于下一代高性能通信设备需要20 GHz或更高的信号频率,因此它们在材料性能方面已接近极限。因此,需要绝缘材料的性质以及电子设备的性能的进一步改善。与其他材料相比,带有铜膜的玻璃基板为电子设备提供了更多优势。最明显的优势在于材料的特性,表面光滑度,高温下的尺寸稳定性,低电导率,低介电损耗,以及以低成本可扩展至大面积面板的能力。在本研究中,作者报告的粘附强度为0.4 kN m玻璃和铜种子层之间的-1。而且,已经成功地证明了湿镀工艺,该工艺能够在玻璃晶片上和内部通孔中容易且均匀地形成膜。

更新日期:2021-03-01
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