Abstract

Three p-type layer structures, i.e. a p-GaN layer, a short-period superlattice (SL) insertion layer, and a polarization-induced hole-doped double-aluminum composition gradient layer, were compared in terms of their performance in 395 nm high-power light-emitting diodes (LEDs). The device with the polarization-induced hole-doped double-aluminum composition gradient layer has an operating voltage of 3.34 V and a wall-plug efficiency of 55.3% under a 350 mA injection current. Moreover, devices with the polarization-induced hole-doped double-aluminum composition gradient layer structure have better optical output power than devices with a short-period SL inserted in p-GaN.

摘要

比较了三种p型层结构，即p-GaN层，短周期超晶格（SL）插入层和偏振诱导的空穴掺杂双铝成分梯度层，在395 nm下的性能大功率发光二极管（LED）。具有极化感应空穴掺杂双铝成分梯度层的器件在350 mA注入电流下的工作电压为3.34 V，壁塞效率为55.3％。此外，与在p-GaN中插入了短周期SL的器件相比，具有极化感应的空穴掺杂双铝成分梯度层结构的器件具有更好的光输出功率。