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Multilayer Mg/NbO thin film nanostructures
Solid State Communications ( IF 2.1 ) Pub Date : 2021-03-01 , DOI: 10.1016/j.ssc.2021.114251
O.V. Stognei , A.N. Smirnov , A.V. Sitnikov , K.I. Semenenko

Multilayer (Mg/NbOx)82 nanostructures with different thickness of Mg layers and the constant thickness of NbOx layers have been prepared. The samples were obtained by ion-beam sputtering of metal and ceramic target and multiple consecutive depositions of NbOx and Mg layers onto substrates. The multilayering of the samples was confirmed by X-ray small-angle reflectometry. The thickness of one bilayer (magnesium layer + niobium oxide layer) was determined based on the small-angle data. The thickness of one bilayer in the studied structures was varied from 2.2 nm to 6.2 nm. Despite the separated deposition the magnesium layer's surface in the (Mg/NbOx)82 nanostructures was partially oxidized. The electric percolation transition was observed in the (Mg/NbOx)82 nanostructures at increase of the Mg layers thickness. At small bilayer thicknesses (less than 4.5 nm) the Mg phase is the partially oxidized nanogranules and the charge transfer in such samples is carried out by electron tunneling between the nanogranules. At larger bilayer thickness, the multilayer samples exhibit usual metallic conductivity.



中文翻译:

多层Mg / NbO薄膜纳米结构

已经制备了具有不同厚度的Mg层和恒定厚度的NbO x层的多层(Mg / NbO x82纳米结构。通过对金属和陶瓷靶进行离子束溅射以及在基材上多次连续沉积NbO x和Mg层获得样品。通过X射线小角反射法确认了样品的多层化。基于小角度数据确定一个双层(镁层+氧化铌层)的厚度。在研究的结构中,一个双层的厚度在2.2 nm至6.2 nm之间变化。尽管沉积是分开的,但(Mg / NbO x82中的镁层表面纳米结构被部分氧化。随着Mg层厚度的增加,在(Mg / NbO x82纳米结构中观察到电渗过渡。在较小的双层厚度(小于4.5 nm)下,Mg相为部分氧化的纳米颗粒,此类样品中的电荷转移通过纳米颗粒之间的电子隧穿进行。在较大的双层厚度下,多层样品表现出通常的金属导电性。

更新日期:2021-03-19
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